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DZ26068

Description
Zener Diode, 6.8V V(Z), 5.8%, 0.1W,
CategoryDiscrete semiconductor    diode   
File Size497KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DZ26068 Overview

Zener Diode, 6.8V V(Z), 5.8%, 0.1W,

DZ26068 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance20 Ω
Number of components1
Maximum operating temperature125 °C
Maximum power dissipation0.1 W
Nominal reference voltage6.8 V
surface mountYES
Maximum voltage tolerance5.8%
Working test current5 mA
This product complies with the RoHS Directive (EU 2002/95/EC).
DZ26068
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
DZ27068 in ML2 type package
Features
Excellent rising characteristics of zener current I
Z
Low zener operating resistance R
Z
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
ML2-N3-B
Name
Pin
1. Cathode
2. Anode
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Marking Symbol: GJ
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Repetitive peak forward current
Total power dissipation
*
Junction temperature
Storage temperature
Symbol
I
FRM
P
T
T
j
T
stg
Rating
200
100
125
–55 to +125
Unit
mA
mW
°C
°C
Note) *: P
T
= 100 mW achieved with a printed circuit board.
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Zener voltage
*1, 2
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
*3
Symbol
V
F
V
Z
R
Z
R
ZK
I
R
S
Z
I
F
= 10 mA
I
Z
= 5 mA
I
Z
= 5 mA
I
Z
= 0.5 mA
V
R
= 4 V
I
Z
= 5 mA
3.2
6.46
Conditions
Min
Typ
Max
1.0
7.14
20
60
0.1
Unit
V
V
W
W
mA
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V
Z
measurement. V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
*2 : V
Z
guaranteed 20 ms after current flow.
*3 : T
j
= 25°C to 150°C
Publication date: December 2011
Ver. AED
1

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