BLF8G20LS-200V
Power LDMOS transistor
Rev. 4 — 21 October 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
1600
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
17.5
D
(%)
33
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (80 MHz typical)
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range
NXP Semiconductors
BLF8G20LS-200V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4,5
6
7
[1]
Pinning
Description
drain
gate
source
video decoupling
n.c.
n.c.
[1]
Simplified outline
Graphic symbol
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G20LS-200V
-
earless flanged LDMOST ceramic package; 6 leads
Version
SOT1120B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
T
case
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
case temperature
Conditions
Min
-
0.5
65
-
[1]
Max
65
+13
+150
200
150
Unit
V
V
C
C
C
-
Continuous use at maximum temperature will affect MTTF
5. Recommended operating conditions
Table 5.
Symbol
T
case
Operating conditions
Parameter
case temperature
Conditions
Min
40
Max
+125
Unit
C
6. Thermal characteristics
Table 6.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 55 W
Typ
0.27
Unit
K/W
BLF8G20LS-200V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 21 October 2013
2 of 14
NXP Semiconductors
BLF8G20LS-200V
Power LDMOS transistor
7. Characteristics
Table 7.
DC characteristics
T
j
= 25
C, unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V; I
D
= 1.6 A
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 13.5 A
Min
65
1.5
1.7
-
-
-
-
-
Typ
-
1.9
2.1
-
50.6
-
19.6
Max
-
2.3
2.5
4.2
-
420
-
Unit
V
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.5 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
0.057 -
Table 8.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz; RF performance
at V
DS
= 28 V; I
Dq
= 1600 mA; T
case
= 25
C; unless otherwise specified; in a production circuit.
Symbol
G
p
D
RL
in
ACPR
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio
Conditions
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
Min
16.3
29
-
-
Typ
17.5
33
15
30
Max
19.2
-
7
26
Unit
dB
%
dB
dBc
8. Test information
8.1 Ruggedness in class-AB operation
The BLF8G20LS-200V is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1600 mA; P
L
= 200 W (CW); f = 1805 MHz.
8.2 Impedance information
Table 9.
Typical impedance
Measured load-pull data; I
Dq
= 1600 mA; V
DS
= 28 V.
f
(MHz)
1805
1843
1880
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.01
j3.66
1.12
j3.97
1.37
j4.20
Z
L[1]
()
1.04
j2.44
1.04
j2.44
1.04
j2.44
BLF8G20LS-200V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 21 October 2013
3 of 14
NXP Semiconductors
BLF8G20LS-200V
Power LDMOS transistor
Fig 1.
Definition of transistor impedance
8.3 Test circuit
See
Table 10
for list of components.
Fig 2.
Component layout
Table 10. List of components
See
Figure 2
for component layout.
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.
Component
C1
C2, C3
C4, C5
C6, C7
C8, C9
C10
C11
R1
[1]
[2]
[3]
[4]
BLF8G20LS-200V
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Value
4.7
F
20 pF
4.7
F
8.2 pF
4.7
F
20 pF
470
F,
63 V
4.7
[1]
[2]
[3]
[4]
[3]
[4]
Remarks
Murata
ATC100B
TDK
ATC800B
TDK
ATC800B
1206
Murata or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 21 October 2013
4 of 14
NXP Semiconductors
BLF8G20LS-200V
Power LDMOS transistor
8.4 Graphical data
8.4.1 1-Tone CW
V
DS
= 28 V; I
Dq
= 1600 mA.
(1) f = 1805 MHz
(2) f = 1843 MHz
(3) f = 1880 MHz
V
DS
= 28 V; I
Dq
= 1600 mA.
(1) f = 1805 MHz
(2) f = 1843 MHz
(3) f = 1880 MHz
Fig 3.
Power gain as a function of average output
power; typical values
Fig 4.
Drain efficiency as a function of average
output power; typical values
BLF8G20LS-200V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 21 October 2013
5 of 14
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