DG200A_MIL
Vishay Siliconix
Monolithic Dual SPST CMOS Analog Switch
FEATURES
D
D
D
D
"15
V Input Signal Range
44-V Maximum Supply Ranges
On-Resistance: 45
W
TTL and CMOS Compatibility
BENEFITS
D
Wide Dynamic Range
D
Simple Interfacing
D
Reduced External Component
Count
APPLICATIONS
D
D
D
D
Servo Control Switching
Programmable Gain Amplifiers
Audio Switching
Programmable Filters
DESCRIPTION
The DG200A_MIL is a dual, single-pole, single-throw analog
switch designed to provide general purpose switching of
analog signals. This device is ideally suited for designs
requiring a wide analog voltage range coupled with low
on-resistance.
The DG200A_MIL is designed on Vishay Siliconix’ improved
PLUS-40 CMOS process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to 30 V peak-to-peak when off. In the on
condition, this bi-directional switch introduces no offset
voltage of its own.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line
Metal Can
IN
2
NC
GND
NC
S
2
D
2
V–
1
2
3
4
5
6
7
Top View
14
13
12
11
10
9
8
IN
1
NC
V+ Substrate
NC
S
1
D
1
NC
GND
IN
2
2
3
4
S
2
6
5
D
2
Top View
V–
IN
1
1
V+ (Substrate and Case)
S
1
9
8
7
D
1
10
NC
TRUTH TABLE
Logic
0
1
Logic “0”
v
0.8 V
Logic “1”
w
2.4 V
Switch
ON
OFF
Document Number: 70035
S-02314—Rev. E, 05-Oct-00
www.vishay.com
4-1
DG200A_MIL
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
DG200AAK
14-Pin CerDIP
–55 to 125_C
10-Pin Metal Can
14-Pin Sidebraze
DG200AAK/883, JM38510/12301BCA,
5962-9562901QCA
DG200AAA
DG200AAA/883, JM38510/12301BIC
JM38510/12301BCC
Part Number
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or
30 mA, whichever occurs first
Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Power Dissipation (Package)
b
10-Pin Metal Can
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
14-Pin CerDIP
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 11 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V–
–
+
V+
GND
IN
X
D
V–
FIGURE 1.
www.vishay.com
4-2
Document Number: 70035
S-02314—Rev. E, 05-Oct-00
DG200A_MIL
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Source Off
Leakage Current
Drain Off
Leakage Current
Channel On
Leakage Current
f
V
ANALOG
r
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
D
=
"10
V, I
S
= –1 mA
V
S
=
"14
V, V
D
=
#14
V
V
D
=
"14
V, V
S
=
#14
V
V
S
= V
D
=
"14
V
Full
Room
Full
Room
Full
Room
Full
Room
Full
–2
–100
–2
–100
–2
–200
–15
45
15
70
100
2
100
2
100
2
200
nA
V
W
Limits
–55 to 125_C
Symbol
V+ = 15 V, V– = –15 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
Min
c
Typ
d
Max
c
Unit
"0.01
"0.01
"0.1
Digital Control
V
IN
= 2.4 V
Input Current with
Input Voltage High
I
INH
V
IN
= 15 V
I
INL
V
IN
= 0 V
Room
Full
Room
Full
Room
Full
–0.5
–1
–0.5
–1
0.0009
0.005
–0.0015
0.5
1
mA
Input Current with
Input Voltage Low
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
Crosstalk
(Channel-to-Channel)
t
ON
t
OFF
Q
C
S(off)
C
D(off)
C
D(on)
+
C
S(On)
OIRR
X
TALK
V
IN
= 5 V, R
L
= 75
W
V
S
= 2 V, f = 1 MHz
See Switching Time Test Circuit
C
L
= 1000 pF, V
g
= 0 V
R
g
= 0
W
f = 140 kHz
V
IN
= 5 V
V
S
= 0 V
V
D
= 0 V
Room
Room
Room
Room
Room
Room
Room
Room
440
340
–10
9
9
25
75
90
dB
pF
1000
425
ns
pC
V
D
= V
S
= 0 V, V
IN
= 0 V
Power Supplies
Positive Supply Current
Negative Supply Current
I+
I–
Both Channels On or Off
V
IN
= 0 V and 2.4 V
Room
Room
–1
0.8
–0.23
2
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
Document Number: 70035
S-02314—Rev. E, 05-Oct-00
www.vishay.com
4-3
DG200A_MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Power Supply Voltage
+6
120
A:
B:
C:
D:
E:
"5
V
"10
V
"12
V
"15
V
"20
V
T
A
= 25_C
0
A
I S, I D (pA)
–6
I
D(on)
I
D(off)
or I
S(off)
Leakage Currents vs. Analog Voltage
100
r DS(on) (
W
)
80
B
60
C
D
40
E
–12
–18
20
–15 –12
–9
–6
–3
0
3
6
9
12
15
V
D
– Drain Voltage (V)
–24
–15 –12
–9
–6
–3
0
3
6
9
12
15
V
ANALOG
– Analog Voltage (V)
Input Switching Threshold vs. V+ and V– Supply Voltages
2.5
Supply Currents vs. Toggle Frequency
2.0
V T (V)
1.5
1.0
0.5
0
0
"5
V+, V– Positive and Negative Supplies (V)
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4-4
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉ
"10
"15
"20
6
5
I+, I– (mA)
4
3
2
V+ = 15 V
V– = –15 V
Both logic inputs
toggled simutaneously
I+
1
I–
0
1k
10 k
100 k
1M
Toggle Frequency (Hz)
Document Number: 70035
S-02314—Rev. E, 05-Oct-00
DG200A_MIL
Vishay Siliconix
TEST CIRCUITS
V
O
is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform.
+15 V
Logic
Input
3V
50%
0V
t
OFF
V
S
90%
3V
GND
t
r
<20 ns
t
f
<20 ns
V
S
= +5 V
S
IN
V+
D
V
O
C
L
35 pF
Switch
Input
Switch
Output
V–
R
L
1 kW
V
O
t
ON
–15 V
V
O
= V
S
R
L
R
L
+ r
DS(on)
FIGURE 2.
Switching Time
+15 V
DV
O
R
g
V+
S
IN
3V
GND
V–
DV
O
= measured voltage error due to charge injection
The charge injection in coulombs is
DQ
= C
L
x
DV
O
–15 V
D
V
O
C
L
1000 pF
IN
X
ON
OFF
ON
V
O
V
g
FIGURE 3.
Charge Injection
C
+15 V
C
V+
+15 V
V+
V
S
S
D
V
O
R
g
= 50
W
0V
S
1
IN
1
S
2
D
2
D
1
50
W
V
O
R
L
GND
–15 V
–15 V
Off Isolation = 20 log
V
S
V
O
X
TALK
= 20 log
C = RF bypass
V
S
V
O
V–
C
V
S
R
g
= 50
W
5V
IN
GND
V–
C
R
L
NC
0V
IN
2
FIGURE 4.
Off Isolation
FIGURE 5.
Channel-to-Channel Crosstalk
Document Number: 70035
S-02314—Rev. E, 05-Oct-00
www.vishay.com
4-5
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