BD530 datasheet, PDF - EEWORLD Datasheet

BD530: DescriptionPNP SILICON AMPLIFIER TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size85KB，2 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BD530 Overview

PNP SILICON AMPLIFIER TRANSISTORS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	2 A
Configuration	Single
Minimum DC current gain (hFE)	60
JESD-609 code	e0
Maximum operating temperature	140 °C
Minimum operating temperature	-55 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	100 MHz

	BD530	BD526	BD528
Description	PNP SILICON AMPLIFIER TRANSISTORS	PNP SILICON AMPLIFIER TRANSISTORS	PNP SILICON AMPLIFIER TRANSISTORS
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
Reach Compliance Code	unknow	unknow	unknow
Maximum collector current (IC)	2 A	2 A	2 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	60	60	60
JESD-609 code	e0	e0	e0
Maximum operating temperature	140 °C	140 °C	140 °C
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	1 W	1 W	1 W
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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