BFP136W
NPN Silicon RF Transistor
3
For power amplifier in DECT and PCN systems
f
T
= 5.5GHz
Gold metalization for high reliability
4
2
1
VPS05605
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFP136W
Maximum Ratings
Parameter
Marking
PAs
1=E
Pin Configuration
2=C
3=E
4=B
Package
SOT343
Unit
V
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
12
20
20
2
150
20
1000
150
-65 ... 150
-65 ... 150
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Ambient temperature
Storage temperature
T
S
60°C
1)
mA
mW
°C
Thermal Resistance
Junction - soldering point
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
90
K/W
1
Jun-22-2001
BFP136W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 80 mA,
V
CE
= 5 V
h
FE
50
100
200
-
I
EBO
-
-
1
µA
I
CBO
-
-
50
nA
I
CES
-
-
100
µA
V
(BR)CEO
12
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Jun-22-2001
BFP136W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 80 mA,
V
CE
= 5 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 30 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 80 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
,
-
-
IP
3
-
9
3
33
-
-
-
I
C
= 80 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50
f
= 900 MHz
f
= 1.8 GHz
Third order intercept point
I
C
= 80 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
G
ma
-
-
15.5
9.5
-
-
F
-
-
2
3.3
-
-
C
eb
-
6.8
-
C
ce
-
0.7
-
C
cb
-
1.7
2.5
f
T
4
5.5
-
typ.
max.
Unit
GHz
pF
dB
1
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
dBm
3
Jun-22-2001
BFP136W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
1.5813
12.331
1.4254
31.901
1.8821
1.0078
33.904
20.691
4.5579
1.1381
1.0033
0
3
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
113.32
1.4907
86.717
0.033605
0
0.22081
0.71518
0.31338
0
0.31461
0
0
0.99886
-
A
-
A
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.0653
46.37
1.8047
0.83992
0.01636
0.36824
0.10174
2977.4
0.02899
0.75
1.11
300
-
fA
-
mA
-
0.0080864 fA
V
-
V
fF
-
V
eV
K
deg
-
fF
-
-
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
0.5
0.51
0.18
0.14
0.05
0.35
78
48
244
fF
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Jun-22-2001
nH
nH
nH
nH
nH
nH
fF
BFP136W
Total power dissipation
P
tot
=
f
(T
S
)
1200
mW
1000
900
P
tot
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
2
10
2
K/W
P
totmax
/ P
totDC
-
10
1
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
Jun-22-2001
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