DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGA2012
1900 MHz high linear low noise
amplifier
Product specification
Supersedes data of 2000 Sep 06
2000 Dec 04
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
FEATURES
•
Low current, low voltage
•
High linearity
•
High power gain
•
Low noise
•
Integrated temperature compensated biasing
•
Control pin for adjustment bias current.
APPLICATIONS
•
RF front end
•
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
handbook, halfpage
BGA2012
PINNING
PIN
1
2
3
4
5, 6
RF in
V
C
V
S
RF out
GND
DESCRIPTION
VS
5
4
6
RF out
VC
1
2
3
MBL251
BIAS
CIRCUIT
Top view
Marking code:
A6-
RF in
GND
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
I
C
|s
21
|
2
NF
PARAMETER
DC supply voltage
DC supply current
DC control current
insertion power gain
noise figure
V
C
= V
S
in application circuit, see Fig.2;
f = 1900 MHz
I
S
= 7 mA; f = 1900 MHz
CONDITIONS
RF input AC coupled
3
7.5
0.11
16
1.7
TYP.
−
−
−
−
MAX.
4.5
UNIT
V
mA
mA
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
S
V
C
I
S
I
C
P
tot
T
stg
T
j
PARAMETER
DC supply voltage
voltage on control pin
supply current
control current
total power dissipation
storage temperature
operating junction temperature
T
s
≤
100
°C
forced by DC voltage on RF input
CONDITIONS
RF input AC coupled
−
−
−
−
−
−65
−
MIN.
MAX.
4.5
V
S
15
0.25
70
+150
150
UNIT
V
V
mA
mA
mW
°C
°C
2000 Dec 04
2
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction
to solder point
CONDITIONS
P
tot
= 135 mW; T
s
≤
100
°C
VALUE
350
BGA2012
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; V
S
= 3 V; I
S
= 7 mA; f = 1900 MHz; T
j
= 25
°C;
unless otherwise specified.
SYMBOL
I
S
I
C
R
L IN
PARAMETER
supply current
control current
return losses input
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
R
L OUT
return losses output
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
|s
21
|
2
insertion power gain
typical application (see Fig.2)
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
NF
noise figure
typical application; see Fig.2; I
S
= 7 mA
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
IP3
in
input intercept point
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
CONDITIONS
5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MIN.
TYP.
7.5
0.11
−11
−20
−14
−9
−10
−8
14
16
14
1.7
2.2
2.3
−7
7
10
MAX.
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
2000 Dec 04
3
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
APPLICATION INFORMATION
BGA2012
handbook, full pagewidth
VS
VC
VC
C5
BIAS
CIRCUIT
VS
C4
L2
C2
C3
C1
RF in
IN
L1
C6
stripline
SOT363
OUT
RF out
MLD470
GND
Fig.2 Application circuit.
List of components (see
Fig.2)
COMPONENT
C1, C2
C3, C5
C4
C6
L1
L2
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (ε
r
= 6.15),
board thickness = 0.64 mm, copper thickness = 35
µm,
gold thickness = 5
µm.
DESCRIPTION
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD inductor
SMD inductor
TYPICAL
APPLICATION
100 pF
22 nF
−
−
−
−
HIGH IP3
APPLICATION
100 pF
22 nF
−
100 nF
3.9 nH
3.9 nH
DIMENSIONS
0603
0603
−
0805
0603
0603
2000 Dec 04
4
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
handbook, halfpage
25
MLD471
gain
(dB)
20
GUM
handbook, halfpage
20
MLD472
gain
(dB)
Gmax
16
s21
2
10
IS
(mA)
8
s21
2
15
12
6
10
8
IS
4
5
4
2
0
0
1000
2000
f (MHz)
3000
0
0
1
2
VC (V)
3
0
I
C
= 7 mA; V
S
= V
C
= 3 V; P
D
=
−30
dBm; Z
o
= 50
Ω.
f = 1900 MHz; V
S
= 3 V; P
D
=
−30
dBm.
Fig.3
Insertion gain (|s
21
|
2
), G
UM
and G
max
as
functions of frequency; typical values.
Fig.4
Insertion gain and supply current as
functions of control voltage; typical values.
handbook, halfpage
20
MLD473
handbook, halfpage
10
MLD474
0
IP3in
(dBm)
−5
s21
2
(dB)
IP3out
(dBm)
5
IP3out
15
10
IP3in
0
−10
5
0
10
−3
10
−2
IC (mA)
10
−1
−5
0
2
4
6
IS (mA)
8
−15
V
S
= V
C
= 3 V; P
D
=
−30
dBm (both tones); f = 1900 MHz;
∆f
= 100 kHz.
f = 1900 MHz; V
S
= 3 V; P
D
=
−30
dBm.
Fig.6
Fig.5
Insertion gain as a function of control
current; typical values.
Output and input 3rd order intercept point
as functions of supply current; typical
application; typical values.
2000 Dec 04
5
京公网安备 11010802033920号
EEWORLD
