K814P/K824P/K844P
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input
FEATURES
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage V
ISO
= 5000 V
RMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) of typical 100 %
• Low temperature coefficient of CTR
• Wide ambient temperature range
C
E
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
1
• Feature phones
C
8
PIN
16 PI
N
A
4 PIN
• Answering machines
• PBX
• Fax machines
17220_2
C
AGENCY APPROVALS
• UL1577, file no. E76222 system code U, double protection
• C-UL CSA 22.2, bulletin 5A
DESCRIPTION
The K814P/K824P/K844P consist of a phototransistor
optically coupled to 2 gallium arsenide infrared emitting
diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or
16-pin (quad) plastic dual inline package.
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements.
ORDER INFORMATION
PART
K814P
K824P
K844P
REMARKS
CTR > 20 %, single channel, DIP-4
CTR > 20 %, dual channel, DIP-8
CTR > 20 %, quad channel, DIP-16
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
(1)
TEST CONDITION
SYMBOL
I
F
VALUE
± 60
± 1.5
100
125
70
7
50
100
150
125
UNIT
mA
A
mW
°C
V
V
mA
mA
mW
°C
t
P
≤
10 µs
I
FSM
P
diss
T
j
V
CEO
V
ECO
I
C
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
P
diss
T
j
Document Number: 83523
Rev. 2.0, 09-Jan-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
1
K814P/K824P/K844P
Vishay Semiconductors
Optocoupler, Phototransistor
Output, AC Input
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
AC isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
(3)
TEST CONDITION
t = 1.0 min
SYMBOL
V
ISO (2)
P
tot
T
amb
T
stg
VALUE
5000
250
- 40 to +100
- 55 to + 125
260
UNIT
V
RMS
mW
°C
°C
°C
2 mm from case, t
≤
10 s
T
sld
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Related to standard climate 23/50 DIN 50014.
(3)
Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I
F
= ± 10 mA, I
C
= 1 mA
I
F
= ± 10 mA, V
CE
= 5 V,
R
L
= 100
Ω
f = 1 MHz
V
CEsat
f
c
C
k
100
0.3
0.3
V
kHz
pF
I
C
= 100 µA
I
E
= 100 µA
V
CE
= 20 V, I
F
= 0, E = 0
V
CEO
V
ECO
I
CEO
70
7
100
V
V
nA
I
F
= ± 50 mA
V
R
= ± 6.0 V
V
F
I
R
1.25
1.6
10
V
µA
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
I
C
/I
F
TEST CONDITION
V
CE
= 5 V, I
F
= ± 5 mA
PART
K814P
SYMBOL
CTR
MIN.
20
TYP.
MAX.
300
UNIT
%
SWITCHING CHARACTERISTICS
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
TEST CONDITION
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
(see figure 1)
V
S
= 5 V, I
C
= 10 mA, R
L
= 1 kΩ (see figure 1)
V
S
= 5 V, I
C
= 10 mA, R
L
= 1 kΩ (see figure 1)
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
TYP.
3.0
3.0
4.7
0.3
6.0
5.0
9.0
18.0
MAX.
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
www.vishay.com
2
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83523
Rev. 2.0, 09-Jan-08
K814P/K824P/K844P
Optocoupler, Phototransistor
Output, AC Input
Vishay Semiconductors
I
F
0
I
C
t
p
t
I
F
0
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50
µs
I
F
+5
V
I
C
= 2 mA; adjusted through
input amplitude
100
%
90
%
10
%
0
Channel I
Channel II
50
Ω
13343
100
Ω
Oscilloscope
R
L
>
1 MΩ
C
L
< 20 pF
t
r
t
d
t
on
Pulse Duration
Delay Time
Rise Time
Turn-on Time
t
s
t
f
t
off
t
Storage Time
Fall Time
Turn-off Time
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
96 11698
t
s
t
f
t
off
(= t
s
+ t
f
)
Fig. 1 - Test Circuit, Non-Saturated Operation
Fig. 3 - Switching Times
I
F
0
R
G
= 50
t
p
= 0.01
T
t
p
= 50 s
I
F
= 10 mA
+5
V
I
C
Channel I
Channel II
50
13344
Oscilloscope
R
L
>
1 M
C
L
< 20 pF
1k
Fig. 2 - Test Circuit, Saturated Operation
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
P
tot
- Total Power Dissipation (mW)
300
250
200
Phototransistor
150
100
50
0
0
40
80
120
IR-diode
1000
I
F
- Forward Current (mA)
Coupled device
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
96 11700
T
amb
- Ambient Temperature (°C)
V
F
- Forward
Voltage
(V)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Fig. 5 - Forward Current vs. Forward Voltage
Document Number: 83523
Rev. 2.0, 09-Jan-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
3
K814P/K824P/K844P
Vishay Semiconductors
Optocoupler, Phototransistor
Output, AC Input
CTR
rel
- Relative Current Transfer Ratio
2.0
V
CE
= 5
V
I
F
= 5 mA
1.5
100
I
C
- Collector Current (mA)
20 mA
I
F
= 50 mA
10
10 mA
5 mA
2 mA
1 mA
0.1
1.0
1
0.5
0
- 25
0
25
50
75
0.1
95 10985
1
10
100
95 11025
T
amb
- Ambient Temperature (°C)
V
CE
- Collector Emitter
Voltage
(V)
Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 9 - Collector Current vs. Collector Emitter Voltage
10000
1.0
I
CEO
- Collector Dark Current,
with
Open Base (nA)
V
CEsat
- Collector Emitter
Saturation
Voltage
(V)
1000
V
CE
= 20
V
I
F
= 0
20
% used
0.8
CTR = 50
%
used
0.6
100
0.4
0.2
10
% used
0
1
10
100
10
1
0
95 11026
25
50
75
100
95 11028
T
amb
- Ambient Temperature (°C)
I
C
- Collector Current (mA)
Fig. 7 - Collector Dark Current vs. Ambient Temperature
Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current
I
C
- Collector Current (mA)
V
CE
= 5
V
10
CTR - Current Transfer Ratio (%)
100
1000
V
CE
= 5
V
100
1
10
0.1
0.01
0.1
95 11027
1
10
100
1
0.1
1
10
100
I
F
- Forward Current (mA)
95 11029
I
F
- Forward Current (mA)
Fig. 8 - Collector Current vs. Forward Current
Fig. 11 - Current Transfer Ratio vs. Forward Current
www.vishay.com
4
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83523
Rev. 2.0, 09-Jan-08
K814P/K824P/K844P
Optocoupler, Phototransistor
Output, AC Input
Vishay Semiconductors
t
on
/t
off
- Turn-on/Turn-off Time (µs)
t
on
/t
off
- Turn-on /Turn-off Time (µs)
50
Saturated Operation
V
S
= 5
V
R
L
= 1 kΩ
10
Non-Saturated
Operation
V
S
= 5
V
R
L
= 100
Ω
40
30
8
6
t
on
t
off
20
10
0
0
5
10
15
t
on
20
t
off
4
2
0
0
2
4
6
8
95 11031
I
F
- Forward Current (mA)
95 11030
I
C
- Collector Current (mA)
Fig. 12 - Turn-on/Turn-off Time vs. Forward Current
Fig. 13 - Turn-on/Turn-off Time vs. Collector Current
PACKAGE DIMENSIONS
in millimeters
< 4.75
3.6 ± 0.1
4.4 ± 0.2
4.5 ± 0.2
6.3 ± 0.1
7.62 nom.
0.53 ± 0.05
9 ± 0.8
1.32 ± 0.05
2.54 nom.
E. g.:
Special features: endstackable
to 2.54 mm (0.100") spacing
4 3
3.3
0.25 ± 0.0
5
Weight:
ca. 0.25 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC
board
1 2
2.54
2.54
14789
technical drawings
according to DIN
specifications
Document Number: 83523
Rev. 2.0, 09-Jan-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
5
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