KBJ4D datasheet, PDF - EEWORLD Datasheet

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KBJ4D: Description2.4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size2MB，2 Pages; ManufacturerKI Semiconductor; Websitehttp://www.kmis.co.kr/

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2.4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

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KI SEMICONDUCTOR

Features

Diff used Junc ti on

Low Forward Volt age Drop

High Curr ent Capabil ity

UL Recognized File # E165989

KBJ4A

THRU

KBJ4M

4 Amp

GLASS PASSIVATED

BRIDGE RECTIFIERS

50 to 1000 Volts

KB J

P

A

D

E

B

+

•

Maximum Ratings

Device

Marking

Operating Junction Temperature: -5 5°C to + 150

°C

Storage Temperature: -55°C to +150°C

Catalog

Number

K BJ4005

KB J401

KB J 402

KB J404

KB J406

KB J408

KB J410

KBJ4A

KBJ4B

KBJ4D

KBJ4G

KBJ4J

KBJ4K

KBJ4M

Maximum

Re

current

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

O

F

N

~ ~

I

-

C

G

H

J

L

M

K

DIMENSIONS

Electrical Characteristics @ 25

°C

Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

Maximum Forward

Voltage Drop Per

Element

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I t Rating for fusing

2

I

F(AV)

I

FSM

V

F

4.0A

150A

1.0V

T

C

=

100°C

8.3ms, half sine

I

FM

= 2.0A per

element;

T

A

= 25°C*

I

R

10µA T

A

= 25°C

500µA T

C

= 100°C

93A

2

S (t<8.35ms)

DIM

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

INCHES

MIN

MAX

.976

.992

.579

.602

.154

.161

.173

.189

.134

.150

.122

.134

.130

.146

.035

.043

.059

.075

.677

.700

.287

.303

.098

.114

.024

.031

.366

.381

.118X45

°

.122

.134

MM

MIN

MAX

24.80

25.20

14.70

15.30

3.90

4.10

4.40

4.80

3.40

3.80

3.10

3.40

3.30

3.70

0.90

1.10

1.50

1.90

17.20

17.80

7.30

7.70

2.50

2.90

0.60

0.80

9.30

9.70

3.0X45

°

3.10

3.40

NOTE

It

2

KI SEMICONDUCTOR

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