SIYU
R
塑封硅整流桥堆
反向电压
50---1000V
正向电流
6.0 A
特征
Features
.134(3.4)
.122(3.1)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.382(9.7)
.366(9.3)
KBJ601 ...... KBJ610
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 1000 V
Forward Current 6.0 A
·½的反向漏电流
Low reverse leakage
·较强的正向浪涌承受½力
High forward surge capability
·浪涌承受½力：170 A Surge
overload rating:170 Amperes peak
.602(15.3)
.578(14.7)
.157
(4.0)
￠.134(8.4)
.122(3.1)
.995(25.3)
.983(24.7)
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.043(1.1)
.035(0.9)
+
~
~
-
.708(18.0)
.669(17.0)
机械数据
Mechanical Data
.114(2.8)
.098(2.5)
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
·安装½½:
任意
·重量: 4.6
克
Mounting Position: Any
Weight:4.6 Grams
.074(1.9)
.059(1.5)
.146(3.7)
.130(3.3)
.031(0.8)
.023(0.6)
.303(7.7) .303(7.7) .303(7.7)
.287(7.3) .287(7.3) .287(7.3)
Unit：inch（mm）
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
加散热片T
C
=111℃
Maximum average forward rectified current
无散热片Ta=25℃
Ratings at 25℃ ambient temperature unless otherwise specified.
KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610
单½
V
V
V
A
A
µA
℃/W
Symbols
GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610
Unit
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
θJA
Tj, TSTG
100
70
100
200
140
200
300
210
300
400
280
400
6.0
2.8
170
30
10
600
420
600
800
560
800
1000
700
1000
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
@TA = 75℃
最大反向峰值电流
Maximum
peak
reverse current full cycle
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-50 --- +150
℃
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
最大正向电压
Maximum forward voltage
KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610
单½
V
µA
Symbols
GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610
Unit
I
F
= 3.0A
TA= 25℃
TA=100℃
V
F
1.0
10
500
40
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
I
R
Cj
pF
- 125 -
大昌电子
DACHANG ELECTRONICS
SIYU
R
特性曲线
Characteristic Curves
正向特性曲线（典型值）
TYPICAL FORWARD CHARACTERISTIC
10
KBJ601...... KBJ610
正向电流降额曲线
FORWARD CURRENT DERATING CURVE
4.0
I
F
Instantaneous Forward Current (A)
平均正向电流
I
F(AV)
(A)
Average Forward Rectified Current (A)
on glass-epoxi substrate
+
~
~
-
Tl=150℃
3.0
P.C.B.
soldering land 5mmф
sine wave R-load
free in air
正向电流 I
F
(A)
1
Tl=25℃
2.0
1.0
Pulse measurement
per diode
I
F(A)
00
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
40
80
120
160
正向电压
V
F
(V)
V
F
Instantaneous Forward Voltage (V)
环境温度 Ta(°C)
Tamb, ambient temperature (°C)
功率损耗曲线
FORWARD POWER DISSIPATION
浪涌特性曲线（最大值）
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
240
I
FSM
14
200
10mS
10mS
12
non-repetitive
Tj=25℃ before
FORWARD POWER DISSIPATION P
F
(W))
I
FSM
Peak Forward Surge Current (A)
1 Cycle
10
8
6
4
2
0
0
峰值正向浪涌电流 I
FSM
(A)
120
80
功率损耗
P(W)
160
40
Sine wave
Tj=150℃
1
2
3
4
5
6
7
0
0
2
5
10
20
通过电流的周期
50
100
Number of Cycles at 60 Hz.
正向电流降额曲线
FORWARD CURRENT DERATING CURVE
10
Tc-sensing point
平均整流电流 I
0
(A)
AVERAGE RECGIFIED FORWARD
CURRENT I
o
(A)
平均正向电流
I
F(AV)
(A)
Average Forward Rectified Current (A)
9
+
~
~
-
8
7
6
5
4
3
2
1
00
Tc
sine wave R-load
with heatsink
I
F(A)
40
80
120
160
管½温度 T
C
(°C)
Case Temperature Tc(℃)
大昌电子
DACHANG ELECTRONICS
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