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KBJ8J

Description
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size418KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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KBJ8J Overview

8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

DATA SHEET
SEMICONDUCTOR
TECHNICAL SPECIFCATIONS OF
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE – 50 to 1000 Volts
KBJ(mm)
CURRENT – 8.0 Amperes
P
FEATURES
•Ideal
for printed circuit board
•Surge
overload rating: 170 Amperes peak
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
KBJ8A THRU KBJ8M
H
C
A
B
N
_
K
J
L
M
MECHANICAL DATA
•Case:Molded
plastic
•Epoxy:UL
94-V-0 rate flame reardant
•Terminal:MIL-STD-202E,Method
208 guaranteed
•Polarity:Symbols
molded or marked on body
•Mounting
position:Any
•Weight:4.6
grams
E
D
R
G
KBJ
Max
Min
Dim
25.20
24.80
A
15.30
14.70
B
C
400 Nominal
17.80
17.20
D
1.10
0.90
E
G
7.30
7.70
H
3.10ψ 3.40ψ
3.70
3.30
J
2.10
1.90
K
9.70
9.30
L
2.90
2.50
M
N
3.40
3.80
4.80
4.40
P
0.60
R
0.80
All Dimensions in mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL KBJ8A KBJ8B KBJ8D KBJ8G KBJ8J KBJ8K KBJ8M UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge lnput Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at Tc=100℃
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage Drop per element at 4.0A DC
Maximum DC Reverse Current at Rated
DC Blocking Voltage per element
I2t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
@TA=25℃
@TA=100℃
VRRM
VRMS
VDC
Io
IFSM
VF
IR
I2t
CJ
RθJA
TJ
TSTG
50
35
50
100
70
100
200
140
200
400
280
400
8.0
170
1.0
10
500
127
40
8.6
-55 to +150
-55 to +150
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
A2Sec
PF
℃/W
NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Case per element Unit mounted on 300x300x1.6mm Aluminum plate heat-sinks.
http://www.yeashin.com
1
REV.02 20120305

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KBJ8J KBJ8A KBJ8B KBJ8D KBJ8G KBJ8K KBJ8M
Description 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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