4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
| Parameter Name | Attribute value |
| Number of terminals | 4 |
| Number of components | 4 |
| Minimum breakdown voltage | 600 V |
| Maximum average input current | 4 A |
| Processing package description | Plastic, KBL, SIP-4 |
| state | ACTIVE |
| packaging shape | Rectangle |
| Package Size | IN-line |
| Terminal form | Wire |
| terminal coating | tin lead |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | Bridge, 4 ELEMENTS |
| Diode component materials | silicon |
| Diode type | bridge rectifier diode |
| Phase | 1 |
| Maximum repetitive peak reverse voltage | 600 V |
| Maximum non-repetitive peak forward current | 150 A |
