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KBL406

Description
4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size6KB,1 Pages
ManufacturerETC1
Download Datasheet Parametric View All

KBL406 Overview

4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

KBL406 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage600 V
Maximum average input current4 A
Processing package descriptionPlastic, KBL, SIP-4
stateACTIVE
packaging shapeRectangle
Package SizeIN-line
Terminal formWire
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage600 V
Maximum non-repetitive peak forward current150 A
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