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KBP08M

Description
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size312KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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KBP08M Overview

1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

KBP08M Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage800 V
Maximum average input current1.5 A
Processing package descriptionCASE KBPM, 4 PIN
stateACTIVE
packaging shapeRectangle
Package SizeIN-line
Terminal formWire
terminal coatingsilver
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current50 A
DATA SHEET
SEMICONDUCTOR
KBP005M THRU KBP10M
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
KBPM
Unit:inch(mm)
FEATURES
•Plastic
package has Underwriters Laboratory Flammability
Classification 94V-0
•This
series is UL listed under Recognized Component Index,
file number E54214
•Glass
passivated chip junctions
•High
surge current capability
•Ideal
for printed circuit board
•High
temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
0.1693 (4.3)
0.1456 (3.7)
0.034 (0.86)
0.028 (0.76)
DIA.
60
(15.2)
MIN.
0.125 x 45
o
(3.2)
0.600 (15.24)
0.560 (14.22)
0.460 (11.68)
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.50
(12.7)
MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.075 (1.91)
0.051 (1.29)
MECHANICAL DATA
•Case:
Molded plastic body over passivated junctions
•Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
•Polarity:
Polarity symbols marked on case
•Mounting
position: Any
•Weight:
0.06 ounce, 1.7 grams
Polarity shown on front side of case: positive lead by beveled corner
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current at
TA=55°C
Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method) TJ=150°C
Rating for fusing (t < 8.3ms)
Maximum instantaneous forward voltage drop at 1.0A per leg
Maximum DC reverse current TA=25°C
at rated DC blocking voltage per leg TA=125°C
Typical junction capacitance per leg (NOTE 1)
Typical thermal resistance per leg (NOTE 2)
Operating junction and storage temperature range
NOTES:
(1) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
VRRM
VRMS
VDC
I(AV)
KBP
005M
50
35
50
KBP
01M
100
70
100
KBP
02M
200
140
200
KBP
04M
400
280
400
1.5
50.0
30.0
10.0
1.0
5.0
500
15.0
40.0
13.0
-55 to +150
KBP
06M
600
420
600
KBP
08M
800
560
800
KBP
10M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
IFSM
I2t
VF
IR
CJ
RθJA
R
 
JL
Tj, TSTG
Amps
A2sec
Volts
uA
pF
℃/W
(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads
* JEDEC registered values
http://www.yeashin.com
1
REV.02 20120305

KBP08M Related Products

KBP08M KBP005M KBP01M KBP02M KBP04M KBP06M KBP10M
Description 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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