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KBP10M

Description
1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size92KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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KBP10M Overview

1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

KBP10M Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature150 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
~
~
+
Case Style KBPM
+
~
~
e4
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case:
KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals:
Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity:
As marked on body
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
1.5 A
50 V to 1000 V
60 A
5 µA
1.0 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse
Maximum RMS voltage
(1)
(1)
SYMBOL
voltage
(1)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
KBP
005M
3N246
50
35
50
KBP
01M
3N247
100
70
100
KBP
02M
3N248
200
140
200
KBP
04M
3N249
400
280
400
1.5
60
40
10
- 55 to + 150
KBP
06M
3N250
600
420
600
KBP
08M
3N251
800
560
800
KBP
10M
3N252
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
°C
Maximum DC blocking voltage
Maximum average forward output rectified
current at T
A
= 40 °C
Peak forward surge current
single half sine-wave
(1)
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
(1)
Note:
(1) JEDEC registered values
T
A
= 25 °C
T
J
= 150 °C
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

KBP10M Related Products

KBP10M KBP005M_12 KBP005M KBP02M KBP04M KBP06M
Description 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Maker Vishay - Vishay Vishay Vishay Vishay
Reach Compliance Code unknow - unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V - 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current 50 A - 50 A 50 A 50 A 50 A
Number of components 4 - 4 4 4 4
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C
Maximum output current 1.5 A - 1.5 A 1.5 A 1.5 A 1.5 A
Maximum repetitive peak reverse voltage 1000 V - 50 V 200 V 400 V 600 V
surface mount NO - NO NO NO NO
Is it Rohs certified? - - incompatible incompatible incompatible incompatible
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