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KBP155G

Description
1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size42KB,2 Pages
ManufacturerETC1
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KBP155G Overview

1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

KBP151G
THRU
KBP157G
Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.5 Amperes
KBP
Features
UL Recognized File # E-96005
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction
High surge current capability
High temperature soldering guaranteed:
260℃ / 10 seconds at 5 lbs., ( 2.3 kg )
tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
.460(11.68)
.420(10.6)
AC
.5 (12.7)
MIN
.035(0.9)
.028(0.7)
.160(4.1)
SPACING
.140(3.6)
.600(15.24)
.560(14.22)
.153(3.9)
.146(3.7)
.050(1.27)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
KBP KBP KBP
Type Number
151G 152G 153G
50 100 200
Maximum Recurrent Peak Reverse Voltage
V
RRM
35
70 140
Maximum RMS Voltage
V
RMS
50 100 200
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified Current
@T
A
= 50℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=125℃
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
KBP KBP KBP KBP
Units
154G 155G 156G 157G
400
280
400
1.5
50
1.1
600
420
600
800 1000
560 700
800 1000
V
V
V
A
A
V
uA
uA
℃/W
I
(AV)
I
FSM
V
F
I
R
R
θ
JA
R
θ
JL
T
J
T
STG
10
500
40
13
-55 to +150
-55 to +150
Note: Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B.
With 0.4” x 0.4” (10mm x 10mm) Copper Pads.
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