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KBP2005G

Description
2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size136KB,2 Pages
ManufacturerFRONTIER
Websitehttp://www.frontierusa.com/
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2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
2A GLASS PASSIVATED BRIDGE RECTIFIER
KBP2005G THRU KBP210G
FEATURES
GLASS PASSIVATED DIE CONSTRUCTION
LOW FORWARD VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH SURGE CURRENT CAPABILITY
HIGH RELIABILITY
IDEAL FOR PRINTED CIRCUIT BOARDS
MECHANICAL DATA
CASE: MOLDED PLASTIC, DIMENSIONS IN INCHES
AND (MILLIMETERS)
TERMINALS: PLATED LEADS SOLDERABLE PER
MIL-STD-202 METHOD 208
POLARITY: AS MARKED ON BODY
MOUNTING POSITION: ANY
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED OUTPUT
CURRENT AT 40°C TA ( NOTE 1 )
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF
SINE-WAVE SUPERIMPOSED ON RATED LOAD
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
SYMBOL
KBP2005G KBP201G KBP202G KBP204G KBP206G KBP208G KBP210G UNITS
V
RRM
V
RMS
V
DC
I
O
I
FSM
T
STG
T
OP
50
35
50
100
70
100
200
140
200
400
280
400
2.0
40
- 55 TO + 150
- 55 TO + 150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
SYMBOL
KBP2005G KBP201G KBP202G KBP204G KBP206G KBP208G KBP210G UNITS
MAXIMUM FORWARD VOLTAGE DROP PER BRIDGE ELEMENT
V
F
1.1
AT 2.0A PEAK
MAXIMUM REVERSE CURRENT AT RATED DC BLOCKING
I
R
10
VOLTAGE PER ELEMENT
NOTE: 1. LEADS MAINTAINED AT AMBIENT TEMPERATURE AT A DISTANCE OF 9.5 mm FORM THE CASE.
V
μA
KBP2005G THRU KBP210G
Page: 1

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