KBP210 datasheet, PDF - EEWORLD Datasheet

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KBP210: Description2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size406KB，2 Pages; ManufacturerYEA SHIN TECHNOLOGY CO.,LTD; Websitehttp://www.yeashin.com/

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KBP210 Overview

2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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DATA SHEET

SEMICONDUCTOR

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE

GLASS PASSIVATED BRIDGE RECTIFIE

VOLTAGE RANGE-50 to 1000 Volts CURRENT-2.0 Amperes

FEATURES

•Ideal

for printed circuit board

•Surge

overload rating: 60 Amperes peak

•High

temperature soldering : 260

C / 10 seconds at terminals

•Pb

free product at available : 99% Sn above meet RoHS

environment substance directive request

.46 (

11.7)

.42 (

10.7

)

KBP200~KBP210

KBP Unit:inch(mm)

.600 (

15.2)

.560 (

14.2

)

MECHANICAL DATA

•Case:Molded

plastic

•Epoxy:

UL 94V-0 rate flame retardant

•Lead:

MIL-STD-202E,Method 208 guaranteed

•Polarity:

Symbols molded or marked on body

•Mounting

position: Any

•Weight:

2.74 grams

.034 (

0.86

) DIA.

.028 (

0.71)

TYP

1.0

(

1.4

)

.160 (4.1)

.140 (3.6)

.153 (

3.9)

.130 (

3.3

)

.50

(

12.7

)MIN

(

15.2

)MIN

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

•Ratings

at 25

℃

ambient temperature unless otherwise specified.

•Single

phase, half wave, 60 Hz, resistive or inductive load.

•For

capacitive load, derate current by 20%.

SYMBOL

KBP200

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Output TA = 50℃

Peak Forward Surge Current 8.3 ms single half

sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per element at 1.0A

Maximum DC Reverse Current at

Rated DC Blocking Voltage per

element

I2t Rating for Fusing(t<8.3ms)

Typical Junction Capacitance(Note1)

Operating Temperature Range

Storage Temperature Range

@TA = 100℃

@TA = 25℃

VRRM

VRMS

VDC

IFSM

KBP201 KBP202 KBP204 KBP206 KBP208

100

200

140

200

400

280

400

2.0

600

420

600

800

560

800

KBP210

1000

700

1000

UNITS

Volts

Amps

1.0

Volts

µAmp

500

I2t

TSTG

-55 to + 150

A2Sec

℃

NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B with 0.47x0.47”(12x12mm)copperpads.

http://www.yeashin.com

REV.03 20130130

KBP210 Related Products

	KBP210	KBP200	KBP201	KBP202	KBP204	KBP206	KBP208
Description	2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W	BRIDGE RECTIFIER DIODE

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