KBPC1506-G datasheet, PDF - EEWORLD Datasheet

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KBPC1506-G: Description15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size76KB，3 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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KBPC1506-G Overview

15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

KBPC1506-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
package instruction	R-XUFM-D4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	600 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-XUFM-D4
Maximum non-repetitive peak forward current	300 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	15 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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Silicon Bridge Rectifiers

KBPC10005-G Thru. KBPC5010-G Series

Reverse Voltage: 50 to 1000V

Forward Current: 10/15/25/35/50A

RoHS Device

Features

-Surge overload-240~500 Amperes peak

-Low forward voltage drop

-Electrically isolated base -2000 Volts

-Materials used carries U/L recognition

0.254(6.45)

0.242(6.15)

0.94

(2.4)

KBPC

0.442(11.23)

0.424(10.77)

0.921(23.40)

0.882(22.40)

diam

0.035(0.90)

0.028(0.70)

1.133(28.80)

1.114(28.30)

Mechanical Data

-Polarit:As marked on Body

-Mounting position:Any

-Weight: 28.82grams

0.732(18.60)

0.693(17.60)

0.673(17.10)

0.634(16.10)

Hole for

No.8 screw

193"(4.9)diam

0.673(17.10)

0.634(16.10)

1.133(28.80)

1.114(28.30)

0.583(14.80)

0.543(13.80)

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

KBPC-G

10005

15005

KBPC-G

1001

1501

2501

3501

5001

100

70

100

KBPC-G

1002

1502

2502

3502

5002

200

140

200

KBPC-G

1004

1504

2504

3504

5004

400

280

400

KBPC-G

1006

1506

2506

3506

5006

600

420

600

KBPC-G

1008

1508

2508

3508

5008

800

560

800

KBPC-G

Unit

1010

1510

2510

3510

5010

1000

700

1000

V

Parameter

Symbol

25005

35005

50005

Maximum Reverse Peak Repetitive Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

V

RRM

V

RMS

V

DC

50

35

50

Parameter

Maximum Average Forward

Rectified Output Current @Tc=55°C

Symbol

I

(AV)

KBPC10

10

240

KBPC15

15

300

KBPC25

25

400

1.1

10.0

-55 to +125

-55 to +150

KBPC35

35

400

KBPC50

50

500

Unit

A

V

μA

°C

Peak Forward Surage Current ,

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load

Maximum Forward Voltage Drop Per Element

at 5.0/7.5/12.5/17.5/25.0A Peak

Maximum Reverse Current at rate

DC Blocking Voltage Per Element @ T

J

=25°C

Operating Temperature Range

Storage Temperature Range

I

FSM

V

F

I

R

T

J

T

STG

REV:A

QW-BBR55

Page 1

Comchip Technology CO., LTD.

KBPC1506-G Related Products

	KBPC1506-G	KBPC1504-G	KBPC25005-G	KBPC50005-G	KBPC5001-G
Description	15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	15 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	50 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	-	conform to
Maker	Comchip Technology	Comchip Technology	-	-	Comchip Technology
package instruction	R-XUFM-D4	R-XUFM-D4	R-XUFM-D4	-	R-XUFM-D4
Reach Compliance Code	compli	compliant	compli	-	compliant
ECCN code	EAR99	EAR99	EAR99	-	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	-	UL RECOGNIZED
Minimum breakdown voltage	600 V	400 V	50 V	-	100 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	-	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	-	1.1 V
JESD-30 code	R-XUFM-D4	R-XUFM-D4	R-XUFM-D4	-	R-XUFM-D4
Maximum non-repetitive peak forward current	300 A	300 A	400 A	-	500 A
Number of components	4	4	4	-	4
Phase	1	1	1	-	1
Number of terminals	4	4	4	-	4
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-	-55 °C
Maximum output current	15 A	15 A	25 A	-	50 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	400 V	50 V	-	100 V
surface mount	NO	NO	NO	-	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	-	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	-	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Base Number Matches	-	1	1	-	1

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