KBPC5001W-G datasheet, PDF - EEWORLD Datasheet

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KBPC5001W-G: Description50 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size95KB，3 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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KBPC5001W-G Overview

50 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

KBPC5001W-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
package instruction	S-XUFM-W4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	100 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	S-XUFM-W4
Maximum non-repetitive peak forward current	500 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	50 A
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
Terminal form	WIRE
Terminal location	UPPER
Maximum time at peak reflow temperature	30
Base Number Matches	1

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Silicon Bridge Rectifiers

Reverse Voltage: 50 to 1000V

Forward Current: 10/15/25/35/50A

RoHS Device

Features

-Surge overload-240~500 Amperes peak

-Low forward voltage drop

-Electrically isolated base -2000 Volts

-Materials used carries U/L recognition

COMCHIP

SMD Diodes Specialist

KBPC10005W-G Thru. KBPC5010W-G Series

KBPC-W

0.442(11.23)

0.424(10.77)

1.20(30.5)

min

0.042(1.07)

0.038(0.97)

Mechanical Data

-Polarit:As marked on Body

-Mounting position:Any

-Weight: 25.95grams

1.133(28.80)

1.114(28.30) 0.732(18.60)

0.693(17.60)

1.133(28.80)

1.114(28.30)

Hole for

No.8 screw

193"(4.9)diam

0.469(11.90)

0.429(10.90)

0.732(18.60)

0.693(17.60)

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

KBPC_W-G KBPC_W-G KBPC_W-G KBPC_W-G KBPC_W-G KBPC_W-G KBPC_W-G

O

Unit

10005

15005

1001

1501

2501

3501

5001

100

70

100

1002

1502

2502

3502

5002

200

140

200

1004

1504

2504

3504

5004

400

280

400

1006

1506

2506

3506

5006

600

420

600

1008

1508

2508

3508

5008

800

560

800

1010

1510

2510

3510

5010

1000

700

1000

V

Parameter

Symbol

25005

35005

50005

Maximum Reverse Peak Repetitive Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

V

RRM

V

RRM

V

DC

50

35

50

Parameter

Maximum Average Forward

Rectified Output Current @Tc=55°C

Symbol

I

(AV)

KBPC10

10

240

KBPC15

15

300

KBPC25

25

400

1.1

10.0

-55 to +125

-55 to +150

KBPC35

35

400

KBPC50

50

500

Unit

A

V

μA

°C

Peak Forward Surage Current ,

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load

Maximum Forward Voltage Drop Per Element

at 5.0/7.5/12.5/17.5/25.0A Peak

Maximum Reverse Current at rate

DC Blocking Voltage Per Element @ T

J

=25°C

Operating Temperature Range

Storage Temperature Range

I

FSM

V

F

I

R

T

J

T

STG

REV:A

QW-BBR56

Page 1

Comchip Technology CO., LTD.

KBPC5001W-G Related Products

	KBPC5001W-G	KBPC1504W-G	KBPC25005W-G	KBPC35005W-G	KBPC50005W-G	KBPC5004W-G
Description	50 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	15 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	50 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4
Reach Compliance Code	compliant	compli	compli	compli	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	100 V	400 V	50 V	50 V	50 V	400 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4	S-XUFM-W4
Maximum non-repetitive peak forward current	500 A	300 A	400 A	400 A	500 A	500 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	50 A	15 A	25 A	35 A	50 A	50 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Maximum repetitive peak reverse voltage	100 V	400 V	50 V	50 V	50 V	400 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	30	30	30	30	30	30
Maker	Comchip Technology	-	-	Comchip Technology	Comchip Technology	Comchip Technology
Base Number Matches	1	1	1	-	1	1

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