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KBPC802

Description
8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size349KB,2 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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KBPC802 Overview

8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

DATA SHEET
SEMICONDUCTOR
KBPC8005 THRU KBPC810
TECHNICAL SPECIFICATIONS
OF SINGLE-PHASE SILICON
BRIDGE RECTIFIER
VOLTAGE RANGE-50 to1000 Volts
CURRENT-8.0 Amperes
FEATURES
•Surge
overload rating: 125 Amperes peak
•Low
forward voltage drop
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
BR-10 Unit:inch(mm)
30
6
4
0
MECHANICAL DATA
•Case:
Molded plastic
•Epoxy:
UL 94V-0 rate flame retardant
•Lead:
MIL-STD-202, Method 208 guaranteed
•Polarity:
Symbols molded or marked on body
•Mounting
position: Any
•Weight:
6.9 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%
KBPC
8005
50
35
50
KBPC
801
100
70
100
KBPC
802
200
140
200
KBPC
804
400
280
400
8.0
KBPC
806
600
420
600
KBPC
808
800
560
800
KBPC
810
1000
700
1000
SYMBOLS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output
Current at TC = 50℃
Peak Forward Surge Current
8.3ms single half sine - wave superimposed on
rated load (JEDEC method )
Maximum Forward Voltage Drop per element at 4.0A DC
Maximum DC Reverse Current at Rate
DC Blocking Voltage per element
I2t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts
@TA = 25℃
IR
@TC =100℃
I2t
CJ
RθJC
TJ
TSTG
VF
IFSM
VRRM
VRMS
VDC
IO
UNIT
Volts
Volts
Volts
Amps
125
1.1
5.0
500
166
200
21
-55 to +150
-55 to +150
Amps
Volts
μAmps
A2Sec
pF
℃/W
2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5x0.5”(13x13mm)copper pads.
http://www.yeashin.com
1
REV.02 20120305

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KBPC802 KBPC8005 KBPC801 KBPC804 KBPC806 KBPC808 KBPC810
Description 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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