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KBU1005

Description
10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size63KB,2 Pages
ManufacturerKI Semiconductor
Websitehttp://www.kmis.co.kr/
Download Datasheet View All

KBU1005 Overview

10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

KBU1001
KI SEMICONDUCTOR
Features
Low Leakage
Low Forward Voltage
Any Mounting Position
Silver Plated Copper Leads
THRU
KBU1007
10 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
KBU
A
D
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
E
Catalog
Number
KBU1001
KBU1002
KBU1003
KBU1004
KBU1005
KBU1006
KBU1007
Maximum
Recurrent
Peak Reverse
Voltage
KBU10A
50V
KBU10B
100V
KBU10D
200V
KBU10G
400V
KBU10J
600V
KBU10K
800V
KBU10M
1000V
Device
Marking
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000v
B
C
-
A
+
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
10 A
300A
T
J
= 65°C
8.3ms, half sine
K
F
H
J
L
V
F
1.1V
I
FM
= 5.0A;
T
J
= 25°C*
DIM
A
B
C
D
E
F
G
H
J
K
L
DIMENSIONS
INCHES
MIN
---
---
---
.15∅ x
---
---
1.00
---
---
---
---
MM
MIN
---
---
---
3.8∅ x
---
---
25.40
---
---
---
---
Maximum DC
Reverse Current At
I
R
T
J
= 25°C
10µA
Rated DC Blocking
100mA T
J
= 100°C
Voltage
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
MAX
.925
.763
.680
.23L
.300
.157
---
.050
.280
.075
.200
MAX
23.50
19.40
17.20
5.57L
7.50
4.00
---
1.30
7.00
1.90
5.10
NOTE
NOM
HOLE
NOM
NOM
TYP
NOM
3PL
KI SEMICONDUCTOR
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