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KBU8G

Description
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size682KB,2 Pages
ManufacturerKI Semiconductor
Websitehttp://www.kmis.co.kr/
Download Datasheet Parametric View All

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KBU8G Overview

8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

KBU8G Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current8 A
Processing package descriptionCASE KBU, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formWire
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit6.9 W
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current300 A
KI SEMICONDUCTOR
Features
Low Forward Voltage Drop
Ideal For Printer Circuit Boards
High Current Capability and High Reliability
High Surge Current Capability
KBU801
THRU
KBU807
8 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
KBU
A
D
Maximum Ratings
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Device
Marking
Maximum
Reccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
E
C
B
Catalog
Number
KBU801
KBU802
KBU803
KBU804
KBU805
KBU806
KBU807
KBU8A
KBU8B
KBU8D
KBU8G
KBU8J
KBU8K
KBU8M
-
AC
+
F
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
(NOTE 1,2 )
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
F(AV)
I
FSM
8A
200A
Tc = 100°C
8.3ms, half sine
K
L
G
J
V
F
1.0V
T
C
= 25°C
DIMENSIONS
INCHES
MIN
.895
.600
.740
.15∅ x
---
.100
.048
.268
---
.180
MM
MIN
22.7
16.8
18.8
3.8∅ x
---
25.4
1.2
6.8
---
4.6
I
R
10
µA
300mA
T
C
= 25°C
T
C
= 100°C
DIM
A
B
C
D
E
F
G
J
K
L
MAX
.935
.700
.780
.23L
.300
--
.052
.280
.140
.220
MAX
23.7
17.8
19.8
5.7L
7.5
---
1.3
7.1
5.3
5.6
NOTE
NOM
HOLE
NOM
NOM
3PL
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
KI SEMICONDUCTOR

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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