DATA SHEET
SEMICONDUCTOR
KBU8A THRU KBU8M
KBU
RS-6
Unit:inch(mm)
47;fpr489N
.94>fpr;4=N/
JQNG UJSV
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE-50 to 1000 Volts CURRENT-8.0 Amperes
FEATURES
•Low
leakage
•Low
forward voltage
•Surge
overload rating: 250 Amperes peak
•High
temperature soldering : 260 C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
O
.760(19.3)
.660(16.8)
MECHANICAL DATA
•Case:Molded
plastic
•Epoxy:
UL 94V-0 rate flame retardant
•Lead:
MIL-STD-202E,Method 208 guaranteed
•Polarity:
Symbols molded or marked on body
•Mounting
position: Any
•Weight:
4.8 grams
0.089(3.6)
MAX
TRCEKP
.260(6.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•
•
•
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TC =
75℃
Peak Forward Surge Current 8.3 ms single half
sine-wave
superimposed on rated load
Maximum Forward Voltage Drop per element at 8.0A
DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage per
element
I2t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance(Note1)
Typical Thermal Resistance(Note2)
Operating Temperature Range
@TA = 100℃
@TA = 25℃
IR
500
I2t
CJ
RθJA
TJ ,TSTG
127
186
10
-55 to + 150
A2Sec
pF
℃/W
℃
VF
1.0
5
µAmp
Volts
SYMBOL
KBU8A
VRRM
VRMS
VDC
IO
50
35
50
KBU8B
100
70
100
KBU8D
200
140
200
KBU8G
400
280
400
8.0
KBU8J
600
420
600
KBU8K
800
560
800
KBU8M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
IFSM
250
Amps
NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambient and from junction to leadmounted on P.C.B with 0.47x0.47”(12x12mm) copper plate.
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