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LBC858BDW1T1G

Description
SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size172KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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LBC858BDW1T1G Overview

SMALL SIGNAL TRANSISTOR

LBC858BDW1T1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)220
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.38 W
surface mountYES
Nominal transition frequency (fT)100 MHz
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
LBC85** DW1T1G
6
5
4
1
2
3
Device Marking:
LBC856ADW1T1G= 3A
LBC856BDW1T1G= 3B
LBC857BDW1T1G= 3F
LBC857CDW1T1G= 3G
LBC858BDW1T1G= 3K
LBC858CDW1T1G = 3L
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
SOT-363
(3)
(2)
(1)
Q
1
Q
2
MAXIMUM RATINGS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current –
Continuous
(4)
(5)
(6)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
P
D
Max
380
250
Unit
mW
DEVICE MARKING
See Table
3.0
R
qJA
T
J
, T
stg
328
–55 to +150
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
LBC85*BDW1T1G
LBC85*BDW1T3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
Rev.O 1/6

LBC858BDW1T1G Related Products

LBC858BDW1T1G LBC858CDW1T1G
Description SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to
Maker LRC LRC
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.1 A 0.1 A
Minimum DC current gain (hFE) 220 420
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.38 W 0.38 W
surface mount YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz
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