3N190 3N191
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT
LOW TRANSFER CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation @ TA=25ºC
Continuous Power Dissipation One Side
Continuous Power Dissipation Both Sides
Maximum Current
Drain to Source
2
Maximum Voltages
Drain to Gate
2
Drain to
Source
2
Gate to Gate
30V
30V
±80V
50mA
300mW
525mW
-65 to +150 °C
-55 to +135 °C
I
GSS
≤ ±10pA
C
rss
≤ 1.0pF
TO-78
TOP VIEW
case &
substrate
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
BS
= 0V unless otherwise stated)
SYMBOL
g
fs1
g
fs2
CHARACTERISTIC
Forward Transconductance Ratio
Gate to Source Threshold Voltage
Differential
Gate to Source Threshold Voltage
Differential with Temperature
4
Gate to Source Threshold Voltage
Differential with Temperature
4
MIN
0.85
TYP
MAX
1.0
100
100
UNITS
CONDITIONS
V
DS
= -15V, I
D
= -500µA,
f
= 1kHz
V
GS1-2
ΔV
GS1
2
ΔT
ΔV
GS1
2
ΔT
mV
V
DS
= -15V, I
D
= -500µA
V
DS
= -15V, I
D
= -500µA
T
S
= -55 to +25 °C
V
DS
= -15V, I
D
= -500µA
T
S
= +25 to +125 °C
μV
C
100
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
BV
DSS
BV
SDS
V
GS
V
GS(th)
I
GSSR
I
GSSF
I
DSS
I
SDS
I
D(on)
I
G1G2
CHARACTERISTIC
Drain to Source Breakdown Voltage
Source to Drain Breakdown Voltage
Gate to Source Voltage
Gate to Source Threshold Voltage
Reverse Gate Leakage Current
Forward Gate Leakage Current
Drain Leakage Current "Off"
Source to Drain Leakage Current "Off"
Drain Current "On"
3
Gate to Gate Isolation Current
-5.0
-
MIN
-40
-40
-3.0
-2.0
-2.0
-6.5
-5.0
-5.0
10
-10
-200
-400
-30.0
±1.0
mA
µA
pA
V
TYP
MAX
UNITS
CONDITIONS
I
D
= -10µA
I
S
= -10µA, V
BD
= 0V
V
DS
= -15V, I
D
= -500µA
V
DS
= V
GS
, I
D
= -10µA
V
DS
= -15V, I
D
= -500µA
V
GS
= 40V
V
GS
= -40V
V
DS
= -15V
V
SD
= -15V, V
DB
= 0V
V
DS
= -15V, V
GS
= -10V
V
G1G2
= ±80V, I
D
= I
S
= 0 = mA
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191
ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
g
fs
g
os
r
ds(on)
C
rss
C
iss
C
oss
CHARACTERISTIC
Forward Transconductance
4
Output Admittance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance Output Shorted
Output Capacitance Input Shorted
MIN
1500
TYP
MAX
4000
300
300
1.0
4.5
3.0
pF
V
DS
= -15V, I
D
= -5mA,
f
= 1MHz
UNITS
µS
Ω
CONDITIONS
V
DS
= -15V, I
D
= -5mA,
f
= 1kHz
V
DS
= -20V, I
D
= -100µA
SWITCHING CHARACTERISTICS
SYMBOL
t
d(on)
t
r
t
off
CHARACTERISTIC
Turn On Delay Time
Turn On Rise Time
Turn Off Time
MIN
TYP
MAX
15
30
50
ns
V
DD
= -15V, I
D(on)
= -5mA,
R
G
= R
L
= 1.4kΩ
UNITS
CONDITIONS
NOTES
1.
2.
3.
4.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Per transistor.
Pulse: t = 300µs, Duty Cycle ≤ 3%
Measured at end points, T
A
and T
B
.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191
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