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LCE15

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size80KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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LCE15 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

LCE15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
Breakdown voltage nominal value17 V
Maximum clamping voltage26.9 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage15 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
LCE6.5A thru LCE28A
www.vishay.com
Vishay General Semiconductor
Low Capacitance T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
Case Style 1.5KE
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
P
PPM
P
D
T
J
max.
Polarity
Package
6.5 V to 28 V
7.22 V to 34.4 V
1500 W
6.5 W
175 °C
Uni-directional
1.5KE
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes TVS cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Peak power pulse surge current with a 10/1000 μs waveform
(1)
(fig. 2)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 2)
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig.
A
SYMBOL
P
PPM
I
PPM
P
D
T
J
, T
STG
LIMIT
1500
See next table
6.5
- 65 to + 175
UNIT
W
A
W
°C
Revision: 24-Sep-12
Document Number: 88357
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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