BD242C datasheet, PDF - EEWORLD Datasheet

BD242C: Description3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220; Categorysemiconductor Discrete semiconductor; File Size379KB，5 Pages; ManufacturerTransys Electronics Limited; Websitehttp://www.transyselectronics.com

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3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	3 A
Maximum Collector-Emitter Voltage	100 V
Processing package description	TO-220, 3 PIN
state	CONSULT MFR
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN LEAD
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	COLLECTOR
Number of components	1
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	10
Rated crossover frequency	3 MHz

	BD242C	BD242	BD242B	BD242A
Description	3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220	3 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-220AB	3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB	3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB

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