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LLXLTN2SF920

Description
Light Emitting Diodes
File Size297KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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LLXLTN2SF920 Overview

Light Emitting Diodes

This product complies with the RoHS Directive (EU 2002/95/EC).
Light Emitting Diodes
LNG992CFB
Round Type
φ5.0
mm
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
Forward current
Reverse voltage
Pulse forward current
*
Symbol
P
D
I
F
Rating
120
30
5
100
Unit
mW
mA
mA
V
°C
°C
Lighting Color
Blue
Operating ambient temperature
Storage temperature
T
opr
T
stg
–25 to +80
–30 to +100
Note) *: The condition of I
FP
is duty 10%, Pulse width 10 msec.
Electro-Optical Characteristics
T
a
= 25°C
Parameter
Luminous intensity
Reverse current
Forward voltage
I
O
I
R
Symbol
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Relative luminous intensity (%)
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
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.
/en at
/ ion
.
Conditions
Min
960
Typ
Max
10
1500
3.5
30
4.0
468
I
F
V
F
1000
500
300
100
50
30
3.0
4.0
5.0
6.0
10
−20
0
20
40
60
80
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
FP
V
R
I
F
= 20 mA
V
R
= 5 V
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
V
F
λ
P
Peak emission wavelength
Spectral half band width
Δλ
Luminous intensity I
O
(mcd)
Forward current I
F
(mA)
3000
Unit
mcd
µA
V
nm
nm
isc
on
500
300
ce
/D
1000
an
Ma
100
1
int
en
3
5
10
30
50
100
tin
30
10
5
3
1
pla
ue
5000
50
di
10000
100
nc
I
O
I
F
Relative luminous intensity
T
a
2.0
100
Pl
ea
Forward current I
F
(mA)
Forward voltage V
F
(V)
Ambient temperature T
a
(°C)
Relative luminous intensity (%)
120
100
80
60
40
20
Relative luminous intensity
 λ
P
Directive characteristics
40°
50°
60°
70°
80°
400
450
500
550
90°
100
80
60
40
20
30°
20° 10°
80°
60°
40°
20°
0
20
40
60
80
10° 20°
30°
40°
50°
60°
70°
I
F
T
a
50
Forward current I
F
(mA)
40
30
20
10
10
0
80°
0
350
90°
100
20
40
60
80
100
Peak emission wavelength
λ
P
(nm)
Relative luminous intensity (%)
Ambient temperature T
a
(°C)
Publication date: December 2008
SHD00385BEK
1

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