®
BD243B/BD243C
BD244B/BD244C
COMPLEMENTARY SILICON POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD243B and BD243C are silicon
Epitaxial-Base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD244B and
BD244C respectively.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
t ot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
≤
25 C
Storage T emperature
Max. O perating Junction Temperature
o
Value
BD243B
BD244B
80
80
5
6
10
2
65
-65 to 150
150
BD243C
BD244C
100
100
Uni t
V
V
V
A
A
A
W
o
o
C
C
For PNP types voltage and current values are negative.
September 1999
1/4
BD243B / BD243C / BD244B / BD244C
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.92
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CE
= rated V
CEO
V
CE
= 60 V
V
EB
= 5 V
I
C
= 30 mA
for
BD243B/BD244B
for
BD243C/BD244C
I
C
= 6 A
I
C
= 6 A
I
C
= 0.3 A
I
C
= 3 A
I
C
= 0.5 A
I
C
= 0.5 A
I
B
= 1 A
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 10 V
V
CE
= 10 V
f = 1MHz
f = 1KHz
30
15
3
20
Min.
Typ .
Max.
0.4
0.7
1
Un it
mA
mA
mA
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat )
∗
V
BE
∗
h
F E
∗
h
fe
Collector-Emitter
Saturation Voltage
Base-Emitt er Voltage
DC Current Gain
Small Signal Current
Gain
80
100
1.5
2
V
V
V
V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
For PNP types voltage and current values are negative.
Safe Operating Area
2/4
BD243B / BD243C / BD244B / BD244C
TO-220 MECHANICAL DATA
DIM.
MIN.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
13.0
2.65
15.25
6.2
3.5
3.75
0.49
0.61
1.14
1.14
4.95
2.4
10.0
16.4
14.0
2.95
15.75
6.6
3.93
3.85
0.511
0.104
0.600
0.244
0.137
0.147
4.40
1.23
2.40
1.27
0.70
0.88
1.70
1.70
5.15
2.7
10.40
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.645
0.551
0.116
0.620
0.260
0.154
0.151
mm
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
0.050
0.027
0.034
0.067
0.067
0.203
0.106
0.409
inch
TYP.
MAX.
0.181
0.051
0.107
P011C
3/4
BD243B / BD243C / BD244B / BD244C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
©
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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