BD244/A/B/C
BD244/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD243, BD243A, BD243B and BD243C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD244
: BD244A
: BD244B
: BD244C
V
CEO
Collector-Emitter Voltage
: BD244
: BD244A
: BD244B
: BD244C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-6
- 10
-2
65
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD244
: BD244A
: BD244B
: BD244C
Collector Cut-off Current
Collector Cut-off Current
: BD244/244A
: BD244B/244C
: BD244
: BD244A
: BD244B
: BD244C
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 0.7
- 0.7
- 0.4
- 0.4
- 0.4
- 0.4
-1
30
15
- 1.5
-2
V
V
Typ.
Max.
Units
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
I
CEO
I
CES
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 0.3A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 6A, I
B
= - 1A
V
CE
= - 4V, I
C
= - 6A
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Pulse Test: PW =300µs, duty Cycle =2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD244/A/B/C
Typical Characteristics
1000
-1.8
V
BE
(sat)(V), SATURATION VOLTAGE
V
CE
= 2V
-1.7
-1.6
-1.5
-1.4
-1.3
-1.2
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
I
C
= 10.1 I
B
h
FE
, DC CURRENT GAIN
100
10
-0.01
-0.1
-1
-10
-0.5
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
-1
-100
V
CE
(sat)(V), SATURATION VOLTAGE
I
C
= 10.1 I
B
I
C
[A], COLLECTOR CURRENT
-10
I
C
(max)
10
m
10
µ
s
1m
s
s
-0.1
100
µ
s
DC
-1
BD244
BD244A
BD244B
BD244C
-0.01
-0.1
-0.1
-1
-10
-1
-10
-100
-1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
200
T[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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®
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
Embedded System
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