BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD250 Series
125 W at 25°C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
q
25 A Continuous Collector Current
40 A Peak Collector Current
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
C
2
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD249
Collector-emitter voltage (R
BE
= 100
Ω)
BD249A
BD249B
BD249C
BD249
Collector-emitter voltage (I
C
= 30 mA)
BD249A
BD249B
BD249C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
L
2
SYMBOL
VALUE
55
70
90
115
45
60
80
100
5
25
40
5
125
3
90
-65 to +150
-65 to +150
250
UNIT
V
CER
V
V
CEO
V
V
A
A
A
W
W
mJ
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD249
V
(BR)CEO
I
C
= 30 mA
(see Note 5)
V
CE
= 55 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
I
CEO
I
EBO
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
5V
4V
4V
4V
1.5 A
5A
4V
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 1.5 A
I
C
= 15 A
I
C
= 25 A
I
C
= 15 A
I
C
= 25 A
I
C
= 15 A
I
C
= 25 A
I
C
=
I
C
=
1A
1A
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
3
(see Notes 5 and 6)
25
10
5
1.8
4
2
4
V
V
I
B
= 0
BD249A
BD249B
BD249C
BD249
BD249A
BD249B
BD249C
BD249/249A
BD249B/249C
MIN
45
60
80
100
0.7
0.7
0.7
0.7
1
1
1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 10 V
V
CE
= 10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1
42
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 5 A
V
BE(off)
= -5 V
I
B(on)
= 0.5 A
R
L
= 5
Ω
†
MIN
I
B(off)
= -0.5 A
t
p
= 20 µs, dc
≤
2%
TYP
0.3
0.9
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS635AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
TCS635AB
h
FE
- DC Current Gain
100
1·0
10
0·1
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
0·1
1·0
10
100
1
0·1
1·0
10
100
0·01
0·001
I
C
= 300 mA
I
C
= 1 A
I
C
= 3 A
0·01
I
C
- Collector Current - A
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
2·0
V
CE
= 4 V
T
C
= 25°C
TCS635AC
1·8
V
BE
- Base-Emitter Voltage - V
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1·0
10
100
I
C
- Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS635AB
I
C
- Collector Current - A
10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
1·0
0·1
BD249
BD249A
BD249B
BD249C
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
140
P
tot
- Maximum Power Dissipation - W
TIS635AA
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
4
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
PRODUCT
INFORMATION
5
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