DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD329
NPN power transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 07
Philips Semiconductors
Product specification
NPN power transistor
FEATURES
•
High current (max. 3 A)
•
Low voltage (max. 20 V).
APPLICATIONS
•
Especially for battery equipped applications.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD330.
handbook, halfpage
BD329
PINNING
PIN
1
2
3
emitter
collector, connected to metal part of
mounting surface
base
DESCRIPTION
2
3
1
1
2
3
Top view
MAM254
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
T
mb
≤
45
°C
I
C
= 0.5 A; V
CE
= 1 V
open base
CONDITIONS
open emitter
−
−
−
−
85
MIN.
−
−
−
−
−
130
TYP.
MAX.
32
20
3
15
375
−
MHz
UNIT
V
V
A
W
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
−
1997 Mar 07
2
Philips Semiconductors
Product specification
NPN power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
≤
45
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
32
20
5
3
3
1
15
+150
150
+150
BD329
UNIT
V
V
V
A
A
A
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
CONDITIONS
note 1
VALUE
100
7
UNIT
K/W
K/W
1997 Mar 07
3
Philips Semiconductors
Product specification
NPN power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 32 V
I
E
= 0; V
CB
= 32 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 0.5 A; V
CE
= 1 V; see Fig.2
I
C
= 2 A; V
CE
= 1 V; see Fig.2
I
C
= 5 mA; V
CE
= 10 V
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 2 A; I
B
= 0.2 A
I
C
= 5 mA; V
CE
= 10 V
I
C
= 2 A; V
CE
= 1 V
I
C
= 0.5 A;
V
CE
= 1 V
MIN.
−
−
−
85
40
50
−
−
−
−
TYP.
−
−
−
−
−
−
−
0.6
−
130
−
BD329
MAX.
100
10
100
375
−
−
0.5
−
1.2
−
1.6
UNIT
nA
µA
nA
V
V
V
MHz
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
−
handbook, full pagewidth
300
MGD844
hFE
250
200
150
100
50
0
10
−1
1
10
10
2
10
3
IC (mA)
10
4
V
CE
= 1 V.
Fig.2 DC current gain; typical values.
1997 Mar 07
4
Philips Semiconductors
Product specification
NPN power transistor
PACKAGE OUTLINE
BD329
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1
P
D
L1
L
1
2
w
M
3
c
Q
e
e1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
2.7
2.3
b
p
0.88
0.65
c
0.60
0.45
D
11.1
10.5
E
7.8
7.2
e
4.58
e1
2.29
L
16.5
15.3
L1
(1)
max
2.54
Q
1.5
0.9
P
3.2
3.0
P1
3.9
3.6
w
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT32
REFERENCES
IEC
JEDEC
TO-126
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-04
1997 Mar 07
5
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