BD376/378/380
BD376/378/380
Medium Power Linear and Switching
Applications
• Complement to BD375, BD377 and BD379 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage : BD376
: BD378
: BD380
Collector-Emitter Voltage : BD376
: BD378
: BD380
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
1
TO-126
2.Collector
3.Base
1. Emitter
Value
- 50
- 75
- 100
- 45
- 60
- 80
-5
-2
-3
-1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: BD376
: BD378
: BD380
Collector-Base
Breakdown Voltage
Collector Cut-off Current
: BD376
: BD378
: BD380
: BD376
: BD378
: BD380
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 45
- 60
- 80
- 50
- 75
- 100
-2
-2
-2
- 100
40
20
375
-1
- 1.5
50
500
V
V
ns
ns
Typ.
Max.
Units
V
V
V
V
V
V
µA
µA
µA
µA
BV
CBO
I
C
= - 100µA, I
E
= 0
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 0.15A
V
CE
= - 2V, I
C
= - 1A
I
C
= - 1A, I
B
= - 0.1A
V
CE
= - 2V, I
C
= -1A
V
CC
= - 30V, I
C
= - 0.5A
I
B1
= - I
B2
= - 0.05A
R
L
= 60Ω
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
t
ON
t
OFF
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
h
FE
Classificntion
Classification
h
FE1
©2000 Fairchild Semiconductor International
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
Rev. A, February 2000
BD376/378/380
Typical Characteristics
100
-500
80
V
CE
(sat)(mV), SATURATION VOLTAGE
V
CE
= -2V
-400
h
FE
, DC CURRENT GAIN
I
C
= 20.I
B
60
-300
40
-200
20
-100
I
C
= 10.I
B
0
-10
-100
-1000
-0
-1E-3
-0.01
-0.1
-1
-10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-1.1
-10
V
BE
(V), BASE EMITTER VOLTAGE
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-1E-3
-0.01
-0.1
I
C
[A], COLLECTOR CURRENT
t)
(sa
V
BE
10.I
B
=
Ic
I
C
MAX. (Continuous)
-1
S/b
V
BE
(on)
V
CE
= -5V
LIM
D
ITE
-0.1
-0.01
-0.1
-1
-10
-1
-10
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
40
35
P
C
[W], POWER DISSIPATION
30
25
20
15
10
5
0
0
25
50
o
75
100
125
150
175
200
Tc[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
BD376
BD378
BD380
V
CEO
MAX.
-100
Rev. A, February 2000
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2
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®
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DISCLAIMER
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ISOPLANAR™
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®
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UHC™
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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