ST5771-1
Discrete POWER & Signal
Technologies
ST5771-1
C
BE
TO-92
PNP Switching Transistor
This device is designed for high speed saturated switching
applications at currents to 100mA. Sourced from Process 65.
See PN4258 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15
15
4.5
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
ST5771-1
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation
ST5771-1
PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
(BR)CES
I
CBO
I
CES
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 3.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
I
C
= 100
µA
V
CB
= 8.0 V, I
E
= 0
V
CE
= 8.0 V, I
E
= 0
V
CE
= 8.0 V, I
E
= 0, T
A
= 125
0
C
V
EB
= 4.5 V, I
C
= 0
15
15
4.5
15
10
10
5.0
1.0
V
V
V
V
nA
nA
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 0.3 V
I
C
= 10 mA, V
CE
= 0.3 V,
T
A
= - 55
°C
I
C
= 1.0 mA, V
CE
= 0.5 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
30
15
30
20
0.15
0.18
0.6
0.8
0.95
1.5
V
V
V
V
V
V
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.8
SMALL SIGNAL CHARACTERISTICS
C
cb
C
eb
h
fe
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
V
CB
= 5.0 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
7.0
3.0
3.5
pF
pF
SWITCHING CHARACTERISTICS
t
s
t
on
t
d
t
r
t
off
t
s
t
f
Storage Time
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
V
CC
= 1.5 V, I
C
= 10 mA
I
B1
= I
B2
= 1.0 mA
V
CC
= 3.0 V
I
C
= I
B1
= I
B2
= 1.0 mA
V
CC
= 1.5 V, I
C
= 10 mA,
I
B1
= 1.0 mA
20
15
10
15
20
20
10
ns
ns
ns
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
京公网安备 11010802033920号
EEWORLD
