BD434/436/438
BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD434
: BD436
: BD438
V
CES
Collector-Emitter Voltage
: BD434
: BD436
: BD438
Collector-Emitter Voltage
: BD434
: BD436
: BD438
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 22
- 32
- 45
- 22
- 32
- 45
- 22
- 32
- 45
-5
-4
-7
-1
36
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD434/436/438
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD434
: BD436
: BD438
Collector Cut-off Current
: BD434
: BD436
: BD438
I
CEO
Collector Cut-off Current
: BD434
: BD436
: BD438
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: BD434/436
: BD438
: ALL DEVICE
: BD434/436
: BD438
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD434
: BD436
: BD438
* Base-Emitter ON Voltage
: BD434
: BD436
: BD438
Current Gain Bandwidth Product
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
40
30
85
50
40
140
140
140
V
CE
= - 22V, V
BE
= 0
V
CE
= - 32V, V
BE
= 0
V
CE
= - 45V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
- 100
- 100
- 100
-1
µA
µA
µA
mA
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 22
- 32
- 45
- 100
- 100
- 100
Typ.
Max.
Units
V
V
V
µA
µA
µA
I
CBO
V
CB
= - 22V, I
E
= 0
V
CB
= - 32V, I
E
= 0
V
CB
= - 45V, I
E
= 0
I
C
= - 2A, I
B
= - 0.2A
- 0.2
- 0.2
- 0.2
- 0.5
- 0.5
- 0.6
- 1.1
- 1.1
- 1.2
V
V
V
V
V
V
MHz
V
BE
(on)
V
CE
= - 1V, I
C
= - 2A
f
T
V
CE
= - 1V, I
C
= - 250mA
3
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD434/436/438
Typical Characteristics
1000
-1
100
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= -1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
-0.1
10
1
-0.01
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-5.0
-4.5
-1000
V
CE
= -1V
I
C
[A], COLLECTOR CURRENT
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-0.0
C
CBO
(pF), COLLECTOR BASE CAPACITANCE
-100
-10
-0.3
-0.5
-0.8
-1.0
-1.3
-1.5
-1.8
-2.0
-1
-0.1
-1
-10
-100
-1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
-10
I
C
MAX. (Pulsed)
10 1m
ms s
10
µ
s
48
42
100
µ
s
I
C
[A], COLLECTOR CURRENT
I
C
Max. (Continuous)
DC
P
C
[W], POWER DISSIPATION
-100
36
30
-1
24
18
12
-0.1
-1
BD434
BD436
BD438
-10
6
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H2
Microcontroller MCU
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