LESHAN RADIO COMPANY, LTD.
Darlington Amplifier Transistors
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
LMBTA13LT1G
LMBTA14LT1G
LMBTA13LT3G
LMBTA14LT3G
Marking
1M
1N
1M
1N
Shipping
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
1
2
LMBTA13LT1G
LMBTA14LT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CES
V
CBO
V
EBO
I
C
Value
30
30
10
300
Unit
Vdc
Vdc
Vdc
mAdc
SOT–23
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
BASE
2
EMITTER
DEVICE MARKING
LMBTA13LT1G = 1M; LMBTA14 LT1G = 1N;
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 100
µAdc,
V
BE
= 0)
Collector Cutoff Current
( V
CB
= 30Vdc, I
E
= 0)
Emitter Cutoff Current
( V
EB
= 10Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
EBO
—
100
nAdc
V
(BR)CEO
30
—
—
100
Vdc
nAdc
I
CBO
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
LMBTA14LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
LMBTA13
LMBTA14
LMBTA13
LMBTA14
V
CE(sat)
V
BE
5,000
10,000
10,000
20,000
––
—
—
—
—
—
1.5
2.0
Vdc
Vdc
Min
Max
Unit
––
ON CHARACTERISTICS (3)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
Base–Emitter On Voltage
(I
C
= 100mAdc, V
CE
= 5.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V
CE
= 5.0 Vdc, I
C
= 10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width
<
300
µs,
Duty Cycle
<
2.0%.
4. f
T
= |h f
e
| *f
test
.
f
T
125
—
MHz
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
LMBTA14LT1G
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500
BANDWIDTH = 1.0 Hz
R ~0
~
2.0
BANDWIDTH = 1.0 Hz
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
200
S
1.0
0.7
0.5
0.3
0.2
100
10
µA
50
I
C
=1.0mA
100µA
20
0.1
0.07
0.05
0.03
100µA
10µA
I
C
=1.0mA
10
5.0
10
20
50 100
200
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
0.02
10
20
50 100
200
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
V
T
, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 3. Noise Current
200
500
BANDWIDTH = 10 Hz TO 15.7 kHz
NF, NOISE FIGURE (dB)
100
70
50
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10
µA
200
100
50
10
µA
100
µA
30
20
100
µA
20
10
I
C
= 1.0 mA
1.0 mA
10
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
5.0
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
R
S
, SOURCE RESISTANCE (kΩ)
R
S
, SOURCE RESISTANCE (kΩ)
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
SMALL–SIGNAL CHARACTERISTICS
|h
fe
|, SMALL– SIGNAL CURRENT GAIN
20
4.0
LMBTA14LT1G
C, CAPACITANCE (pF)
T
J
=25°C
10
7.0
5.0
V
CE
= 5.0 V
f = 100 MHz
2.0
T
J
= 25°C
C
ibo
C
obo
1.0
0.8
0.6
0.4
3.0
2.0
0.04
0.1
0.2
0.4
1.0
1.2
4.0
10
20
40
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 7. High Frequency Current Gain
200k
3.0
T
J
= 125°C
100k
T
J
= 25°C
2.5
h
FE
, DC CURRENT GAIN
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k
5.0 7.0
10
20
30
50
70
100
200
300
500
25°C
I
C
= 10mA
2.0
50 mA
250mA
500mA
1.5
–55°C
V
CE
= 5.0V
1.0
0.5
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1000
I
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (µA)
Figure 8. DC Current Gain
R
θV
, TEMPERATURE COEFFICIENTS (mV/°C)
–1.0
Figure 9. Collector Saturation Region
1.6
T
J
= 25°C
1.4
*APPLIES FOR I
C
/I
B
<h
FE
/3.0
–2.0
+25°C TO +125°C
* R
θVC
for V
CE(sat)
–55°C TO +25°C
V, VOLTAGE ( VOLTS )
V
BE(sat)
@ I
C
/I
B
= 1000
1.2
–3.0
V
BE(on)
@ V
CE
= 5.0 V
1.0
+25°C TO +125°C
–4.0
θ
VB
for V
BE
–5.0
0.8
V
CE(sat)
@ I
C
/I
B
= 1000
–55°C TO +25°C
0.6
5.0
7.0
10
20
30
50
70
100 200 300
500
–6.0
5.0 7.0
10
20
30
50
70
100
200
300
500
C , COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
LMBTA14LT1G
D = 0.5
0.2
SINGLE PULSE
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
SINGLE PULSE
Z
θJC(t)
= r(t) • R
θJC
T
J(pk)
– T
C
= P
(pk)
Z
θJC(t)
Z
θJA(t)
= r(t) • R
θJA
T
J(pk)
– T
A
= P
(pk)
Z
θJA(t)
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
t, TIME (ms)
Figure 12. Thermal Response
1.0k
I
C
, COLLECTOR CURRENT (mA)
700
500
300
200
1.0 ms
FIGURE A
T
A
= 25°C
T
C
= 25°C
100µs
t
P
P
P
P
P
1.0 s
100
70
50
30
20
t
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.4
0.6
1.0
2.0
4.0
6.0
10
20
40
1
1/f
DUTY CYCLE =t
1
f =
t
1
t
P
10
PEAK PULSE POWER = P
P
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13.Active Region Safe Operating Area
Design Note: Use of Transient Thermal
Resistance Data
Rev.O 5/6
京公网安备 11010802033920号
EEWORLD
