BF966S
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixerstages especially for UHF-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
3
4
2
94 9307
96 12647
G
2
G
1
1
D
BF966S Marking: BF966S
Plastic case (TO 50)
1 Drain; 2 Source; 3 Gate 1; 4 Gate 2
+
+
+
+
12623
S
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate 1/Gate 2-source peak current
Total power dissipation
Channel temperature
Storage temperature range
T
amb
Symbol
V
DS
I
D
Value
20
30
10
200
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
v
60°C
±I
G1/2SM
P
tot
T
Ch
T
stg
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
(40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Maximum
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 23-Jan-97
1 (8)
BF966S
Electrical DC Characteristics
T
amb
= 25°C, unless otherwise specified
Parameters / Test Conditions
Drain-source breakdown voltage
I
D
= 10
m
A, –V
G1S
= –V
G2S
= 4 V
Gate 1-source breakdown voltage
±I
G1S
= 10 mA, V
G2S
= V
DS
= 0
Gate 2-source breakdown voltage
±I
G2S
= 10 mA, V
G1S
= V
DS
= 0
Gate 1-source leakage current
±V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2-source leakage current
±V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
Gate 1-source cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
Gate 2-source cut-off voltage
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
Type
Symbol
V
(BR)DS
±V
(BR)G1SS
±V
(BR)G2SS
±I
G1SS
±I
G2SS
I
DSS
I
DSS
I
DSS
–V
G1S(OFF)
–V
G2S(OFF)
Min.
20
8
8
14
14
50
50
18
10.5
18
2.5
2.0
Typ.
Max.
Unit
V
V
V
nA
nA
mA
mA
mA
V
V
BF966S
BF966SA
BF966SB
4
4
9.5
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz, T
amb
= 25°C, unless otherwise specified
Parameters / Test Conditions
Forward transadmittance
Gate 1-input capacitance
Gate 2-input capacitance
V
G1S
= 0, V
G2S
= 4 V
Feedback capacitance
Output capacitance
Power gain
g
S
= 2 mS, g
L
= 0.5 mS, f = 200 MHz
g
S
= 3.3 mS, g
L
= 1 mS, f = 800 MHz
AGC range
V
G2S
= 4... –2 V, f = 800 MHz
Noise figure
g
S
= 2 mS, g
L
= 0.5 mS, f = 200 MHz
g
S
= 3.3 mS, g
L
= 1 mS, f = 800 MHz
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
G
ps
Min.
15
Typ.
18.5
2.2
1.1
25
0.8
25
18
40
1.0
1.8
2.6
Max.
Unit
mS
pF
pF
fF
pF
dB
dB
dB
dB
dB
35
1.2
n
G
ps
F
F
2 (8)
TELEFUNKEN Semiconductors
Rev. A2, 23-Jan-97
BF966S
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
300
P
tot
– Total Power Dissipation ( mW )
250
I
D
– Drain Current ( mA )
200
150
100
50
0
0
96 12159
80
70
60
50
40
30
20
10
0
20
40
60
80
100 120 140 160
12764
V
DS
= 15V
V
G1S
= 4V
3V
2V
1V
0
–1V
–1
0
1
2
3
4
5
T
amb
– Ambient Temperature (
°C
)
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
36
32
I
D
– Drain Current ( mA )
28
24
20
16
12
8
4
0
0
12762
Figure 4. Drain Current vs. Gate 2 Source Voltage
4.0
1.5V
1V
C
issg1
– Gate 1 Input Capacitance ( pF )
V
G1S
= 2V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V
G2S
= 4V
0.5V
V
DS
=15V
V
G2S
=4V
f=1MHz
0
–0.5V
–1V
2
4
6
8
10
12
14
16
3
6
9
12 15 18 21 24 27 30
V
DS
– Drain Source Voltage ( V )
12765
I
D
– Drain Current ( mA )
Figure 2. Drain Current vs. Drain Source Voltage
100
Figure 5. Gate 1 Input Capacitance vs. Drain Current
2.00
C
oss
– Output Capacitance ( pF )
90
I
D
– Drain Current ( mA )
80
70
60
50
40
30
20
10
0
–1
12763
V
DS
= 15V
V
G2S
= 6V
5V
4V
3V
2V
1V
0
–1V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0
V
G2S
=4V
I
D
=10mA
f=1MHz
0
1
2
3
4
5
12766
2
4
6
8
10 12 14 16 18 20
V
G1S
– Gate 1 Source Voltage ( V )
V
DS
– Drain Source Voltage ( V )
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
TELEFUNKEN Semiconductors
Rev. A2, 23-Jan-97
3 (8)
BF966S
4.0
C
issg2
– Gate 2 Input Capacitance ( pF )
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
–3
12767
20
V
DS
=15V
V
G1S
=0
f=1MHz
Im ( y ) ( mS )
11
18
16
14
12
10
8
6
4
2
0
–2
–1
0
1
2
3
4
5
6
12770
f=1300MHz
I
D
=5mA
I
D
=10mA
1000MHz
700MHz
400MHz
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
I
D
=20mA
100MHz
0
2
4
6
8
10 12 14 16 18 20
V
G2S
– Gate 2 Source Voltage ( V )
Re (y
11
) ( mS )
Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
10
– Transducer Gain ( dB )
0
–10
–20
–30
–40
–50
–60
–70
–5
12768
Figure 10. Short Circuit Input Admittance
0.3
f=1300MHz
0.2
I
D
=5mA
Im ( y ) ( mS )
12
0.1
10mA
20mA
1000MHz
0.0
700MHz
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
0.3
0.4
0.5
f= 200MHz
4V
3V
2V
1V
0
–0.5V
–1V
S
21
2
V
G2S
=–2...–3V
–4
–3
–2
–1
0
1
2
3
12772
–0.1
0
0.1
0.2
Re (y
12
) ( mS )
V
G1S
– Gate 1 Source Voltage ( V )
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
24
22
20
18
16
14
12
10
8
6
4
2
0
0
12769
Figure 11. Short Circuit Reverse Transfer Admittance
5
y
21s
– Forward Transadmittance ( mS )
V
DS
=15V
f=1MHz
V
G2S
=4V
0
–5
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
I
D
=5mA
10mA
20mA
f=100MHz
3V
Im ( y ) ( mS )
21
–10
–15
–20
–25
–30
400MHz
700MHz
1000MHz
2V
1V
0.5V
10
15
20
25
30
0
5
–35
–40
–8
12771
1300MHz
–4
0
4
8
12
16
20
24
I
D
– Drain Current ( mA )
Re (y
21
) ( mS )
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Forward Transfer Admittance
4 (8)
TELEFUNKEN Semiconductors
Rev. A2, 23-Jan-97
BF966S
9
8
7
Im ( y ) ( mS )
22
6
5
4
3
400MHz
2
1
0
0
12773
I
D
=5mA 10mA 20mA
f=1300MHz
1000MHz
700MHz
100MHz
0.5
1.0
V
DS
=15V
V
G2S
=4V
f=100...1300MHz
1.5
2.0
2.5
Re (y
22
) ( mS )
Figure 13. Short Circuit Output Admittance
TELEFUNKEN Semiconductors
Rev. A2, 23-Jan-97
5 (8)
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