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S34MS02G205BHB000

Description
Flash,
Categorystorage    storage   
File Size1MB,16 Pages
ManufacturerSkyHigh Memory
Websitehttp://www.skyhighmemory.com/index.html
Download Datasheet Parametric View All

S34MS02G205BHB000 Overview

Flash,

S34MS02G205BHB000 Parametric

Parameter NameAttribute value
MakerSkyHigh Memory
Reach Compliance Codeunknown
ECCN codeEAR99
Memory IC TypeFLASH
Programming voltage1.8 V
typeSLC NAND TYPE
S34MS08G2
8Gb,1.8 V, 4-bit ECC, x8 I/O, SLC NAND
Flash Memory for Embedded
Distinctive Characteristics
Performance
Page Read / Program
Random access: 30 µs (Max)
Sequential access: 45 ns (Min)
Program time / Multiplane Program time: 300 µs (Typ)
Block Erase / Multiplane Erase
Block Erase time: 3.5 ms (Typ)
Density
8 Gb (4 Gb
2)
Architecture (For each 4 Gb device)
Input / Output Bus Width: 8-bits
Page Size: (2048 + 128) bytes; 128-byte spare area
Block Size: 64 Pages or (128k + 8k) bytes
Plane Size
• 2048 Blocks per Plane or (256M + 16M) bytes
Device Size
• 2 Planes per Device or 512 MB
NAND Flash Interface
Open NAND Flash Interface (ONFI) 1.0 compliant
Address, Data and Commands multiplexed
Supply Voltage
1.8V device: V
CC
= 1.7V ~ 1.95V
Security
One Time Programmable (OTP) area
Serial number (unique ID)
Hardware program/erase disabled during power transition
Additional Features
Supports Multiplane Program and Erase commands
Supports Copy Back Program
Supports Multiplane Copy Back Program
Supports Read Cache
Electronic Signature
• Manufacturer ID: 01h
Operating Temperature
Industrial: –40 °C to 85 °C
Industrial Plus: –40 °C to 105 °C
Reliability
100,000 Program / Erase cycles (Typ) (with 4-bit ECC per
528 bytes)
10 Year Data retention (Typ)
Blocks zero and one are valid and will be valid for at least
1000 program-erase cycles with ECC
Package Options
Lead Free and Low Halogen
63-Ball BGA 9
11
1 mm
SkyHigh Memory Limited
Document Number: 002-00515 Rev. *I
Suite 4401-02, 44/F One Island East,
18 Westlands Road Hong Kong
www.skyhighmemory.com
Revised May 22, 2019
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