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LRB550V-30T3G

Description
Schottky barrier diode G eneral rectification
File Size106KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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LRB550V-30T3G Overview

Schottky barrier diode G eneral rectification

LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB550V-30T1GG
Applications
G eneral rectification
LRB550V-30T1G
1
Features
1) Small surface mounting type.
2) L ow V
F,
L ow I
R
SOD– 323
2
3) High reliability.
3)
We declare that the material of product
compliance with RoHS requirements.
1
2
ANODE
Construction
Silicon epitaxial planar
Device Marking and Ordering Information
Device
LRB550V-30T1G
LRB550V-30T3G
Marking
Shipping
3000/Tape&Reel
10000/Tape&Reel
CATHODE
SD
SD
Absolute maximum ratings
(Ta = 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
60Hz for 1
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
30
30
0.5
2
150
-40 to +150
Unit
V
V
A
A
Electrical characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
1
V
F
2
I
R
Min.
-
-
-
Typ.
-
-
-
Max.
0.39
0.6 0
30
Unit
V
V
µA
Conditions
I
F
=100mA
I
F
=700mA
V
R
=10V
Rev.O 1/3

LRB550V-30T3G Related Products

LRB550V-30T3G LRB550V-30T1G
Description Schottky barrier diode G eneral rectification Schottky barrier diode G eneral rectification

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