Bulletin I25185 rev. C 03/03
ST083S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
85A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range (see table)
T
J
ST083S
85
85
135
2450
2560
30
27
400 to 1200
10 to 20
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AC (TO-94)
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ST083S Series
Bulletin I25185 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
08
ST083S
10
12
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
400
800
1000
1200
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
30
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
210
200
150
70
50
V
DRM
50
60
I
TM
180
o
el
120
120
80
25
50
50
85
330
350
320
220
50
V
DRM
-
60
I
TM
100µs
270
210
190
85
50
-
85
2540
1190
630
250
50
V
DRM
-
60
I
TM
Units
1930
810
400
100
50
-
85
V
A/µs
°C
A
22Ω / 0.15µF
22Ω / 0.15µF
22Ω / 0.15µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST083S
85
85
135
2450
2560
2060
2160
Units Conditions
A
°C
DC @ 77°C case temperature
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
180° conduction, half sine wave
I
2
t
Maximum I
2
t for fusing
30
27
21
19
I
2
√t
Maximum I
2
√t
for fusing
300
t = 0.1 to 10ms, no voltage reapplied
2
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ST083S Series
Bulletin I25185 rev. C 03/03
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
ST083S
2.15
1.46
1.52
2.32
Units
Conditions
I
TM
= 300A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
t
2
I
H
I
L
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum holding current
Typical latching current
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
2.34
600
1000
mA
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
t
q
Typical delay time
ST083S
1000
0.80
Min
10
Max
20
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 100A, commutating di/dt = 10A/µs
V
R
= 50V, t
p
= 200µs, dv/dt = 200V/µs
µs
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST083S
500
30
Units
V/µs
mA
Conditions
T
J
= T
J
max., linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST083S
40
5
5
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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ST083S Series
Bulletin I25185 rev. C 03/03
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque, ± 10%
ST083S
-40 to 125
-40 to 150
0.195
0.08
15.5
(137)
14
(120)
Units
°C
Conditions
DC operation
K/W
Nm
(Ibf-in)
Nm
(Ibf-in)
g
See Outline Table
Non lubricated threads
Lubricated threads
Mounting surface, smooth, flat and greased
wt
Approximate weight
Case style
130
TO-209AC (TO-94)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.034
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
08
2
3
3
S
4
12
5
P
6
F
7
N
8
0
9
- S = Compression bonding Stud
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
- P = Stud Base 1/2"-20UNF-2A threads
- Reapplied dv/dt code (for t
q
Test Condition)
- t
q
code
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
t
q
(µs)
up to 800V
t
q
(µs)
only for
1000/1200V
dv/dt - t
q
combinations available
dv/dt (V/µs)
10
20
20
200
FN
FK
FK
4
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ST083S Series
Bulletin I25185 rev. C 03/03
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
37
)M
IN
(0 .
9 .5
8.5 (0.33) DIA.
4.3 (0.17) DIA
2.6 (0.10) MAX.
RED SILICON RUBBER
157 (6.18)
170 (6.69)
RED CATHODE
C.S. 0.4 mm 2
(.0006 s.i.)
C.S. 16mm 2
(.025 s.i.)
20
(0 .
FLEXIBLE LEAD
79
)M
IN
.
.
Fast-on Terminals
WHITE GATE
AMP. 280000-1
REF-250
10 (0.39)
215 (8.46)
70 (2.75) MIN.
RED SHRINK
29 (1.14) MAX.
WHITE SHRINK
22.5 (0.88) MAX. DIA.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16)
MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Maximum Allowable Case T
emperature (°C)
130
S 083SS
T
eries
R
thJC
(DC) = 0.195 K/ W
120
Maximum Allowable Case T
emperature (°C)
130
120
110
S 083S S
T
eries
R
thJC
(DC) = 0.195 K/ W
110
Conduc tion Angle
Conduction Period
100
90
30°
80
70
0
20
40
60
80
100
120
140
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
100
90
30°
60°
60°
90°
120°
180°
DC
90°
120°
180°
80
0
10 20
30 40 50 60
70 80 90
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
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