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BD676

Description
4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size137KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BD676 Overview

4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

BD676 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionROHS COMPLIANT PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureDarlington WITH BUILT-IN diode AND resistor
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor750

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Index Files: 2511  1531  1113  1304  987  51  31  23  27  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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