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T120F12VFB

Description
Silicon Controlled Rectifier, 120000mA I(T), 1200V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size263KB,4 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

T120F12VFB Overview

Silicon Controlled Rectifier, 120000mA I(T), 1200V V(DRM),

T120F12VFB Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time25 µs
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2 V
Maximum holding current250 mA
Maximum leakage current30 mA
On-state non-repetitive peak current2900 A
Maximum on-state voltage2.2 V
Maximum on-state current120000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1200 V
surface mountNO
Trigger device typeSCR
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