BD777 datasheet, PDF - EEWORLD Datasheet

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BD777: DescriptionDARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS; CategoryDiscrete semiconductor The transistor; File Size119KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BD777 Overview

DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS

BD777 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-225AA
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Manufacturer packaging code	CASE 77-08
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-225AA
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz

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PD, POWER DISSIPATION (WATTS)

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•

High DC Current Gain

hFE = 1400 (Typ) @ IC = 2.0 Adc

•

Collector–Emitter Sustaining Voltage — @ 10 mAdc

VCEO(sus) = 45 Vdc (Min) — BD776

VCEO(sus)

= 60 Vdc (Min) — BD777, 778

VCEO(sus)

= 80 Vdc (Min) — BD780

•

Reverse Voltage Protection Diode

•

Monolithic Construction with Built–in Base–Emitter output Resistor

. . . designed for general purpose amplifier and high–speed switching applications.

THERMAL CHARACTERISTICS

MAXIMUM RATINGS

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Operating and Storage Junction

Temperature Range

Total Device Dissipation

TC = 25

C – Derate above 25

Base Current

Collector Current —

Continuous Peak

Emitter–Base Voltage

Collector–Base Voltage

Collector–Emitter Voltage

Characteristics

Rating

Symbol

TJ, Tstg

VCEO

VCB

VEB

Symbol

θJC

θJA

BD776

– 65 to + 150

BD777

BD778

0.12

100

4.0

6.0

5.0

83.3

8.34

Max

BD780

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

Preferred

devices are Motorola recommended choices for future use and best overall value.

Plastic Darlington

Complementary Silicon Power

Transistors

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

REV 7

PD, POWER DISSIPATION (WATTS)

4.0

8.0

Figure 1. Power Derating

T, TEMPERATURE (°C)

100

120

C/W

mAdc

Watts

Unit

Adc

Vdc

140

160

0.4

0.8

1.2

1.6

DARLINGTON

4–AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

45, 60, 80 VOLTS

15 WATTS

*Motorola Preferred Device

CASE 77–08

TO–225AA TYPE

BD777

PNP

BD776

BD778

BD780 *

Order this document

by BD777/D

NPN

BD777 BD776 BD778 BD780

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE:

Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

MFAX:

RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET:

http://Design–NET.com

JAPAN:

Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

HONG KONG:

Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

◊

Motorola Bipolar Power Transistor Device Data

*BD777/D*

BD777/D

BD777 Related Products

	BD777	BD776	BD780	BD778
Description	DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS	DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS	DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS	DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Parts packaging code	TO-225AA	TO-225AA	TO-225AA	TO-225AA
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	PLASTIC, CASE 77-08, 3 PIN	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3
Manufacturer packaging code	CASE 77-08	CASE 77-08	CASE 77-08	CASE 77-08
Reach Compliance Code	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	60 V	45 V	80 V	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	750	750	750	750
JEDEC-95 code	TO-225AA	TO-225AA	TO-225AA	TO-225AA
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	PNP	PNP	PNP
Maximum power dissipation(Abs)	15 W	15 W	15 W	15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz	20 MHz	20 MHz
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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