PTFB213208FV
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
320 W, 28 V, 2110 – 2170 MHz
Description
The PTFB213208SV is a 320-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFB213208FV
Package H-34275G-6/2
Features
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25
-30
35
30
•
•
•
Broadband internal matching
Wide video bandwidth
Typical pulsed CW performance, 2140 MHz, 28 V
(combined outputs)
- Output power @ P
1dB
= 343 W
- Efficiency = 54%
- Gain = 16.5 dB
Typical single-carrier WCDMA performance,
2140 MHz, 28 V
- Output power = 50 dBm avg
- Gain = 17 dB
- Efficiency = 32%
Capable of handling 10:1 VSWR @ 28 V, 320 W
(CW) output power
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
IMD3, ACPR (dBc)
IMD Up
-35
-40
-45
-50
-55
-60
36
38
40
42
44
46
48
50
b213208fv-gr16
25
Drain Efficiency (%)
•
IMD Low
ACPR
Efficiency
20
15
10
5
0
•
•
•
•
52
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.6 A, P
OUT
= 85 W average, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
Min
15.75
—
—
Typ
17.0
32
–35
Max
—
—
–29.5
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 13
Rev. 02, 2012-07-03
PTFB213208FV
Confidential, Limited Internal Distribution
DC Characteristics
(both sides)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 2.6 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–6 to +10
200
–40 to +150
0.20
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB213208FV V1
PTFB213208FV V1 R250
Order Code
PTFB213208FVV1XWSA1
PTFB213208FVV1R250XTMA1
Package Description
H-34275G-6/2, ceramic open-cavity, push-pull earless
H-34275G-6/2, ceramic open-cavity, push-pull earless
Shipping
Tray
Tape & Reel, 250 pcs
Pinout Diagram
(top view)
V1
D1
D2
V2
Pin
V1
V2
D1
D2
G1
G2
S
Description
V
DD
device 1
V
DD
device 2
Drain device 1
Drain device 2
Gate device 1
Gate device 2
Source (flange)
S (flange)
S = flange
G1
G2
H-37275G-6-2_pd_08-30-2011
Lead connections for PTFB213208SV
Data Sheet
– DRAFT ONLY
2 of 13
Rev. 02, 2012-07-03
PTFB213208FV
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28V, I
DQ
= 2.7 A, ƒ = 2170 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, 3.84 MHz BW
24
60
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 7.5,
BW = 3.84 MHz
-10
50
Efficiency (% ACP (dBc)
%),
PAR (dB) Gain (dB)
),
Gain
Efficiency
16
12
20
0
Efficiency
-30
-40
-50
-60
35
40
45
50
30
20
PAR @ 0.01% CCDF
8
4
-20
-40
ACP Low
0
35
40
45
50
b213208fv-gr2
ACP Low
ACP Up
b213208fv-gr3
10
0
-60
55
55
Output Power Avg(dBm)
Average Output Power (dBm)
Single-carrier WCDMA 3GPP
Broadband Performance
V
DD
= 28 V, I
DQ
= 2.7 A, P
OUT
= 100 W
IReturn Loss (dB), ACP Up (dBc)
40
0
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
19
40
Gain & PAR (dB), Efficiency (%)
Efficiency
30
-10
20
Gain
Return Loss
ACP Up
-20
17
20
10
PAR
-30
16
Efficiency
10
0
2060
b213208fv-gr4
2100
2140
2180
-40
2220
15
36
38
40
42
44
46
48
50
b213208fv-gr5
0
52
Frequency (MHz)
Average Output Power (dBm)
Data Sheet
– DRAFT ONLY
3 of 13
Rev. 02, 2012-07-03
Efficiency (%)
18
Gain
30
Gain (dB)
Drain Efficiency (%)
20
40
ACP Up & Low (dBc)
-20
40
PTFB213208FV
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.7 A,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
-25
-30
20
Single Carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 2.7 A, P
OUT
= 80 W
0
-5
-10
-15
Gain
IMD (dBc)
-35
-40
-45
-50
-55
35
38
41
44
47
50
2170 MHz
2140 MHz
2110 MHz
b213208fv-gr8
18
17
16
15
2040
Return Loss
-20
-25
2240
b213208fv-gr17
53
2090
2140
2190
Average Output Power (dBm)
Frequency (MHz)
CW Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170
Two-tone Drive-up (over temperature)
V
DD
= 28 V, I
DQ
= 2.7 A,
ƒ
1
=
2139.5
MHz, ƒ
2
= 2140.5 MHz
60
20
20
19
+25°C
+85°C
–20°C
50
40
30
20
Efficiency
19
50
Efficiency (%)
Gain (dB)
18
17
40
30
18
17
16
15
35
40
45
50
Gain
16
15
45
47
49
51
53
20
10
Gain
Efficiency
b213208fv-gr6
10
0
55
b213208fv-gr9
55
Output Power, PEP (dBm)
Output Power, Avg. (dBm)
Data Sheet
– DRAFT ONLY
4 of 13
Rev. 02, 2012-07-03
Efficiency (%)
Gain (dB)
Return Loss (dB)
IM3 Low
IM3 Up
Gain (dB)
19
PTFB213208FV
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-tone Drive-up
at selected frequencies
V
DD
= 28 V, I
DQ
= 2.7 A, tone spacing = 1 MHz
-20
Two-tone Broadband Performance
V
DD
= 28 V, I
DQ
= 2.7 A, P
OUT
= 126 W
45
-5
IMD 3rd Order (dBc)
-30
-40
-50
-60
-70
36
40
44
48
2110 MHz
2140 MHz
2170 MHz
b213208fv-gr13
Gain(dB), Efficiency(%)
35
30
25
20
15
10
5
2050
b213208fv-gr15
-15
Efficiency
-20
-25
-30
Gain
-35
-40
2100
2150
2200
-45
2250
52
Output Power, PEP (dBm)
Frequency(MHz)
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170 MHz
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2140 MHz,
tone spacing = 1 MHz
50
40
Intermodulation Distortion (dBc)
-20
-30
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
35
40
45
50
b213208fv-gr11
-40
-50
IM3L
Efficiency
30
20
10
0
30
20
10
0
-60
-70
35
40
45
50
b213208fv-gr12
55
55
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
– DRAFT ONLY
5 of 13
Rev. 02, 2012-07-03
Drain Efficiency(%)
Efficiency (%)
IMD (dBc)
IM3L
IM5L
IM7L
Efficiency
40
Input Return Loss (dB)
40
IRL
-10
京公网安备 11010802033920号
EEWORLD
