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BD896

Description
POWER TRANSISTOR, TO-220
Categorysemiconductor    Discrete semiconductor   
File Size152KB,6 Pages
ManufacturerPower Innovations Limited
Websitehttp://www.power-innovations.com
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POWER TRANSISTOR, TO-220

BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BD895, BD897, BD899 and BD901
70 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD896
Collector-base voltage (I
E
= 0)
BD898
BD900
BD902
BD896
Collector-emitter voltage (I
B
= 0)
BD898
BD900
BD902
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
A
T
j
T
stg
V
CEO
V
CBO
SYMBOL
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-0.3
70
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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