|
BD941F |
BD939F |
BD937F |
| Description |
SILICON EPITAXIAL BASE POWER TRANSISTORS |
SILICON EPITAXIAL BASE POWER TRANSISTORS |
SILICON EPITAXIAL BASE POWER TRANSISTORS |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
| Maker |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code |
unknow |
unknow |
unknow |
| Maximum collector current (IC) |
3 A |
3 A |
3 A |
| Configuration |
Single |
Single |
Single |
| Minimum DC current gain (hFE) |
40 |
40 |
40 |
| JESD-609 code |
e0 |
e0 |
e0 |
| Maximum operating temperature |
150 °C |
150 °C |
150 °C |
| Polarity/channel type |
NPN |
NPN |
NPN |
| Maximum power dissipation(Abs) |
19 W |
19 W |
19 W |
| surface mount |
NO |
NO |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) |
3 MHz |
3 MHz |
3 MHz |