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BD941F

Description
SILICON EPITAXIAL BASE POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size292KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BD941F Overview

SILICON EPITAXIAL BASE POWER TRANSISTORS

BD941F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)19 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)3 MHz

BD941F Related Products

BD941F BD939F BD937F
Description SILICON EPITAXIAL BASE POWER TRANSISTORS SILICON EPITAXIAL BASE POWER TRANSISTORS SILICON EPITAXIAL BASE POWER TRANSISTORS
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 3 A 3 A 3 A
Configuration Single Single Single
Minimum DC current gain (hFE) 40 40 40
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 19 W 19 W 19 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz

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