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BDP31

Description
NPN medium power transistor
CategoryDiscrete semiconductor    The transistor   
File Size47KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BDP31 Overview

NPN medium power transistor

BDP31 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)60 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BDP31
NPN medium power transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 23
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