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BB804

Description
Variable Capacitance Diode, 42pF C(T), 18V, Silicon, TO-236,
CategoryDiscrete semiconductor    diode   
File Size29KB,3 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

BB804 Overview

Variable Capacitance Diode, 42pF C(T), 18V, Silicon, TO-236,

BB804 Parametric

Parameter NameAttribute value
MakerAtmel (Microchip)
Reach Compliance Codeunknown
Minimum breakdown voltage18 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Minimum diode capacitance ratio1.65
Nominal diode capacitance42 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
minimum quality factor100
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
BB804
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D
Common cathode
Applications
Tuning of separate resonant circuits, push–pull
circuits in FM range, especially for car radios
94 8550
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
F
T
j
T
stg
Value
20
18
50
100
–55...+150
Unit
V
V
mA
°
C
°
C
Characteristics
T
j
= 25
_
C
Parameter
Reverse current
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
V
R
=16V
I
R
20
nA
V
R
=16V, T
j
=60
°
C
I
R
0.2
m
A
V
R
=2V, f=1MHz
C
D
42
47.5
pF
Diode capacitance
1
)
p
V
R
=2V, f=1MHz
Group 0
C
D
42
43.5
pF
V
R
=2V, f=1MHz
Group 1
C
D
43
44.5
pF
V
R
=2V, f=1MHz
Group 2
C
D
44
45.5
pF
V
R
=2V, f=1MHz
Group 3
C
D
45
46.5
pF
V
R
=2V, f=1MHz
Group 4
C
D
46
47.5
pF
Capacitance ratio
V
R
=2V,8V, f=100MHz
C
D2
/ C
D8
1.65
1.75
Series resistance
C
D
=38pF, f=100MHz
r
s
0.3
0.4
W
Figure of merit
C
D
=38pF, f=100MHz
Q
100
140
1
) A packing unit (reel) contains diodes from one capacitance group only. Delivery of single capacitance groups
available only on request.
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (3)

BB804 Related Products

BB804
Description Variable Capacitance Diode, 42pF C(T), 18V, Silicon, TO-236,
Maker Atmel (Microchip)
Reach Compliance Code unknown
Minimum breakdown voltage 18 V
Configuration COMMON CATHODE, 2 ELEMENTS
Minimum diode capacitance ratio 1.65
Nominal diode capacitance 42 pF
Diode component materials SILICON
Diode type VARIABLE CAPACITANCE DIODE
JEDEC-95 code TO-236
JESD-30 code R-PDSO-G3
Number of components 2
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Certification status Not Qualified
minimum quality factor 100
surface mount YES
Terminal form GULL WING
Terminal location DUAL

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