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BDP952

Description
PNP Silicon AF Power Transistors
CategoryDiscrete semiconductor    The transistor   
File Size43KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BDP952 Overview

PNP Silicon AF Power Transistors

BDP952 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeSOT-223
package instructionSOT-223, 4 PIN
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BDP952...BDP956
PNP Silicon AF Power Transistors
For AF driver and output stages
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP951...BDP955 (NPN)
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1





4
3
2
1
VPS05163
Type
BDP952
BDP954
BDP956
Maximum Ratings
Parameter
Marking
BDP 952
BDP 954
BDP 956
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
Package
SOT223
SOT223
SOT223
Symbol
V
CEO
V
CBO
V
EBO
BDP952
80
100
5
BDP954
100
120
5
BDP956
Unit
120
140
5
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 99 °C
Junction temperature
Storage temperature
Thermal Resistance
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJS
3
5
200
500
3
150
-65 ... 150
A
mA
W
°C
Junction - soldering point
1)
17
K/W
Jul-06-2001

BDP952 Related Products

BDP952 BDP956
Description PNP Silicon AF Power Transistors PNP Silicon AF Power Transistors
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Parts packaging code SOT-223 SOT-223
package instruction SOT-223, 4 PIN SOT-223, 4 PIN
Contacts 4 4
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 80 V 120 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1.5 W 1.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
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