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BDP956

Description
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BDP956 Overview

PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)

BDP956 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.8 V
Base Number Matches1
BDP 952
PNP Silicon AF Power Transistor
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP951...BDP955 (NPN)
Type
BDP 952
BDP 954
BDP 956
Marking Ordering Code
BDP 952 Q62702-D1340
BDP 954 Q62702-D1342
BDP 956 Q62702-D1344
Pin Configuration
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
Package
SOT-223
SOT-223
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
BDP 952
BDP 954
BDP 956
Collector-base voltage
BDP 952
BDP 954
BDP 956
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 99°C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Symbol
Values
80
100
120
Unit
V
V
CEO
V
CBO
100
120
140
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJA
R
thJS
1
5
3
5
200
500
W
150
- 65 ... + 150
42
17
°C
mA
A
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group
Nov-28-1996

BDP956 Related Products

BDP956 BDP952 BDP954 Q62702-D1344 Q62702-D1342 Q62702-D1340
Description PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
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