BDV64B datasheet, PDF - EEWORLD Datasheet

BDV64B: Description12 A, 100 V, PNP, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size171KB，4 Pages; ManufacturerMOSPEC; Websitehttp://www.mospec.com.tw/eng/index.html

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12 A, 100 V, PNP, Si, POWER TRANSISTOR

Parameter Name	Attribute value
Maker	MOSPEC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	12 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	125 W
surface mount	NO
Nominal transition frequency (fT)	0.1 MHz

	BDV64B	BDV64	BDV64A	BDV65	BDV65A	BDV65B
Description	12 A, 100 V, PNP, Si, POWER TRANSISTOR	12 A, 60 V, PNP, Si, POWER TRANSISTOR	12 A, 80 V, PNP, Si, POWER TRANSISTOR	12 A, 60 V, NPN, Si, POWER TRANSISTOR	12 A, 80 V, NPN, Si, POWER TRANSISTOR	12 A, 100 V, NPN, Si, POWER TRANSISTOR
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	12 A	12 A	12 A	12 A	12 A	12 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	1000	1000	1000	1000	1000	1000
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power dissipation(Abs)	125 W	125 W	125 W	125 W	125 W	125 W
surface mount	NO	NO	NO	NO	NO	NO
Maker	MOSPEC	MOSPEC	MOSPEC	-	MOSPEC	MOSPEC
Base Number Matches	-	1	1	1	1	-

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